Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications

S. F. Yoon; K. H. Tan; W. K. Loke; S. Wicaksono; K. L. Lew; T. K. Ng; Z. Xu; Y. K. Sim; A. Stöhr; S. Fedderwitz; M. Weiß; O. Ecin; A. Poloczek; A. Malcoci; D. Jäger; N. Saadsaoud; E. Dogheche; M. Zegaoui; J. F. Lampin; D. Decoster; C. Tripon-Canseliet; S. Faci; J. Chazelas; J. A. Gupta; S. P. McAlister

doi:10.1149/1.3120682

Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications

S. F. Yoon, K. H. Tan, W. K. Loke, S. Wicaksono, K. L. Lew, T. K. Ng, Z. Xu, Y. K. Sim, A. Stöhr, S. Fedderwitz, M. Weiß, O. Ecin, A. Poloczek, A. Malcoci, D. Jäger, N. Saadsaoud, E. Dogheche, M. Zegaoui, J. F. Lampin, D. DecosterC. Tripon-Canseliet, S. Faci, J. Chazelas, J. A. Gupta, S. P. McAlister

Physical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3μm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55μm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWFIM of 30ps and photoresponse of up to 1.6μm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ∼330mV lower than that of a conventional AlGaAs/GaAs HBT.

Original language	English (US)
Title of host publication	ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
Publisher	Electrochemical Society Inc.
Pages	5-29
Number of pages	25
Edition	3
ISBN (Electronic)	9781607680611
ISBN (Print)	9781566777117
DOIs	https://doi.org/10.1149/1.3120682
State	Published - 2009
Event	50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States Duration: May 24 2009 → May 29 2009

Publication series

Name	ECS Transactions
Number	3
Volume	19
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
Country/Territory	United States
City	San Francisco, CA
Period	05/24/09 → 05/29/09

ASJC Scopus subject areas

General Engineering

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10.1149/1.3120682

Cite this

Yoon, S. F., Tan, K. H., Loke, W. K., Wicaksono, S., Lew, K. L., Ng, T. K., Xu, Z., Sim, Y. K., Stöhr, A., Fedderwitz, S., Weiß, M., Ecin, O., Poloczek, A., Malcoci, A., Jäger, D., Saadsaoud, N., Dogheche, E., Zegaoui, M., Lampin, J. F., ... McAlister, S. P. (2009). Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3 (3 ed., pp. 5-29). (ECS Transactions; Vol. 19, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3120682

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title = "Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications",

abstract = "This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3μm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55μm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWFIM of 30ps and photoresponse of up to 1.6μm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ∼330mV lower than that of a conventional AlGaAs/GaAs HBT.",

author = "Yoon, {S. F.} and Tan, {K. H.} and Loke, {W. K.} and S. Wicaksono and Lew, {K. L.} and Ng, {T. K.} and Z. Xu and Sim, {Y. K.} and A. St{\"o}hr and S. Fedderwitz and M. Wei{\ss} and O. Ecin and A. Poloczek and A. Malcoci and D. J{\"a}ger and N. Saadsaoud and E. Dogheche and M. Zegaoui and Lampin, {J. F.} and D. Decoster and C. Tripon-Canseliet and S. Faci and J. Chazelas and Gupta, {J. A.} and McAlister, {S. P.}",

year = "2009",

doi = "10.1149/1.3120682",

language = "English (US)",

isbn = "9781566777117",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "5--29",

booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3",

edition = "3",

note = "50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",

}

Yoon, SF, Tan, KH, Loke, WK, Wicaksono, S, Lew, KL, Ng, TK, Xu, Z, Sim, YK, Stöhr, A, Fedderwitz, S, Weiß, M, Ecin, O, Poloczek, A, Malcoci, A, Jäger, D, Saadsaoud, N, Dogheche, E, Zegaoui, M, Lampin, JF, Decoster, D, Tripon-Canseliet, C, Faci, S, Chazelas, J, Gupta, JA & McAlister, SP 2009, Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications. in ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3 edn, ECS Transactions, no. 3, vol. 19, Electrochemical Society Inc., pp. 5-29, 50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting, San Francisco, CA, United States, 05/24/09. https://doi.org/10.1149/1.3120682

Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications. / Yoon, S. F.; Tan, K. H.; Loke, W. K. et al.
ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3. ed. Electrochemical Society Inc., 2009. p. 5-29 (ECS Transactions; Vol. 19, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications

AU - Yoon, S. F.

AU - Tan, K. H.

AU - Loke, W. K.

AU - Wicaksono, S.

AU - Lew, K. L.

AU - Ng, T. K.

AU - Xu, Z.

AU - Sim, Y. K.

AU - Stöhr, A.

AU - Fedderwitz, S.

AU - Weiß, M.

AU - Ecin, O.

AU - Poloczek, A.

AU - Malcoci, A.

AU - Jäger, D.

AU - Saadsaoud, N.

AU - Dogheche, E.

AU - Zegaoui, M.

AU - Lampin, J. F.

AU - Decoster, D.

AU - Tripon-Canseliet, C.

AU - Faci, S.

AU - Chazelas, J.

AU - Gupta, J. A.

AU - McAlister, S. P.

PY - 2009

Y1 - 2009

N2 - This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3μm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55μm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWFIM of 30ps and photoresponse of up to 1.6μm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ∼330mV lower than that of a conventional AlGaAs/GaAs HBT.

AB - This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3μm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55μm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWFIM of 30ps and photoresponse of up to 1.6μm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ∼330mV lower than that of a conventional AlGaAs/GaAs HBT.

UR - http://www.scopus.com/inward/record.url?scp=74349103889&partnerID=8YFLogxK

U2 - 10.1149/1.3120682

DO - 10.1149/1.3120682

M3 - Conference contribution

AN - SCOPUS:74349103889

SN - 9781566777117

T3 - ECS Transactions

SP - 5

EP - 29

BT - ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3

PB - Electrochemical Society Inc.

T2 - 50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting

Y2 - 24 May 2009 through 29 May 2009

ER -

Yoon SF, Tan KH, Loke WK, Wicaksono S, Lew KL, Ng TK et al. Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3. 3 ed. Electrochemical Society Inc. 2009. p. 5-29. (ECS Transactions; 3). doi: 10.1149/1.3120682

Recent progress in dilute nitride-anrimonide materials for photonic and electronic applications

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