Flexible electronic and photonic devices have received broad interest in the past, due to their compact size, new functionalities, and other merits which devices on rigid substrates do not possess. In this context, the author review recent progresses on flexible III-nitride nanowire photonic devices, focusing on LEDs and lasers. The formation of III-nitride nanowire LEDs and lasers directly on various foreign substrates is firstly described, paving the way to flexible III-nitride nanowire photonic devices through either direct growth on or transfer to flexible substrates. The realization of flexible III-nitride nanowire LEDs through various transfer processes is further detailed. In the end, the challenges of III-nitride nanowire technology for flexible integrated photonics are discussed.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/1/3437-01-01, REP/1/3189-01-01
Acknowledgements: We acknowledge the supports of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, and GCC Research Council REP/1/3189-01-01. The authors are also thankful to Prof. Songrui Zhao from McGill University for sharing ideas contributed to this article. This article was amended on December 17, 2018 to correct the authorship and the acknowledgement section.