Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Min-Kyu Song, Ji-Hoon Kang, Xinyuan Zhang, Wonjae Ji, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Bowei Dong, Samarth Aggarwal, Weier Wan, Seok-Man Hong, Suma George Cardwell, Irem Boybat, Jae-sun Seo, Jang-Sik Lee, Mario Lanza, Hanwool Yeon, Murat Onen, Ju Li, Bilge YildizJesús A. del Alamo, Seyoung Kim, Shinhyun Choi, Gianluca Milano, Carlo Ricciardi, Lambert Alff, Yang Chai, Zhongrui Wang, Harish Bhaskaran, Mark C Hersam, Dmitri Strukov, H.-S. Philip Wong, Ilia Valov, Bin Gao, Huaqiang Wu, Ronald Tetzlaff, Abu Sebastian, Wei Lu, Leon Chua, J. Joshua Yang, Jeehwan Kim

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

Memristive technology has been rapidly emerging as a potential alternative to traditional CMOS technology, which is facing fundamental limitations in its development. Since oxide-based resistive switches were demonstrated as memristors in 2008, memristive devices have garnered significant attention due to their biomimetic memory properties, which promise to significantly improve power consumption in computing applications. Here, we provide a comprehensive overview of recent advances in memristive technology, including memristive devices, theory, algorithms, architectures, and systems. In addition, we discuss research directions for various applications of memristive technology including hardware accelerators for artificial intelligence, in-sensor computing, and probabilistic computing. Finally, we provide a forward-looking perspective on the future of memristive technology, outlining the challenges and opportunities for further research and innovation in this field. By providing an up-to-date overview of the state-of-the-art in memristive technology, this review aims to inform and inspire further research in this field.
Original languageEnglish (US)
JournalACS Nano
DOIs
StatePublished - Jun 29 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-07-04
Acknowledgements: This review was developed out of the conference “The 5th International Conference on Memristive Materials, Devices & Systems (MEMRISYS 2022)”, held on November 30 to December 02, 2022. M.-K.S. acknowledges support from the National Research Foundation of Korea (NRF-2021R1A6A3A14044297). L.A. acknowledges support from Deutsche Forschungsgemeinschaft (DFG) under Project AL 560/21-1 and from the framework of the WAKeMeUP and StorAIge project which received funding from the Electronic Components and Systems for European Leadership Joint Undertaking in collaboration with the European Union’s H2020 Framework Programme (H2020/2014-2020) and National Authorities, under grant agreement No. 783176 and No. 101007321, respectively. H.B. acknowledges support from the European Union’s Horizon 2020 research and innovation programme (Grant No. 101017237, PHOENICS Project) and European Union’s Innovation Council Pathfinder programme (Grant No. 101046878, HYBRAIN Project). J.A.d.A., M.O., J.L., and B.Y. acknowledge support from the MIT-IBM Watson AI Lab. M.C.H. acknowledges support from the National Science Foundation Materials Research Science and Engineering Center at Northwestern University (NSF DMR-1720139). S.H. and S.C. acknowledge support from the R&D programs of National Research Foundation of Korea (NRF) grant funded by the Korea government (Ministry of Science and ICT) (2022M3F3A2A01072851 and 2022M3I7A2078273). S.K. acknowledges support from Samsung Science & Technology Foundation (Grant No. SRFC-IT2001-40206). J.-S.S. acknowledges support from JUMP COCOSYS, a Semiconductor Research Corporation program sponsored by Defense Advanced Research Projects Agency. Z.W. thanks the support from the Hong Kong Research Grant Council (Grant Nos. 27206321 and 17205922) and National Natural Science Foundation of China (Grant No. 62122004). Y.C acknowledges support from Research Grant Council of Hong Kong (PolyU502/22). G.M., C.R., and I.V. acknowledge support from the European project MEMQuD, code 20FUN06. This project (EMPIR 20FUN06 MEMQuD) has received funding from the EMPIR programme cofinanced by the Participating States and from the European Union’s Horizon 2020 research and innovation programme. S.G.C. acknowledges financial support from the DOE Office of Science (ASCR/BES) for the Microelectronics Co-Design project COINLFIPS. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Materials Science
  • General Engineering

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