Realization of p-type conduction in compositionally graded quaternary AlInGaN

Chunlei Zhao; Gaoqiang Deng; Lidong Zhang; Yang Wang; Yunfei Niu; Jiaqi Yu; Zhifeng Shi; Guotong Du; Xiaohang Li; Yuantao Zhang

doi:10.1016/j.micrna.2022.207377

Realization of p-type conduction in compositionally graded quaternary AlInGaN

Chunlei Zhao, Gaoqiang Deng, Lidong Zhang, Yang Wang, Yunfei Niu, Jiaqi Yu, Zhifeng Shi, Guotong Du, Xiaohang Li, Yuantao Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

Quaternary AlInGaN alloy offers more degree of freedom in independently adjusting the band gap and lattice constant, and it shows the great potential in the fabrication of nitride optoelectronic and electronic devices. In this work, AlInGaN films were grown by metal-organic chemical vapor deposition and the p-type conduction was realized in compositionally graded quaternary AlInGaN. The element compositions in AlInGaN were confirmed by secondary ion mass spectrometry. The structural properties such as layer thickness, lattice polarity and surface morphology of the epilayers were characterized by cross-sectional scanning transmission electron microscopy and atomic force microscopy (AFM). The measured surface AFM images verify that the surface morphology of the quaternary AlInGaN film is smooth and it is free from V-shaped pits. Hall effect measurement results show that the grown graded AlInGaN is p-type with the hole concentration of ∼7.3 × 1016 cm−3 at room temperature. The realization of p-type conduction in AlInGaN can enrich the polarization engineering and the device structures of nitride semiconductors.

Original language	English (US)
Pages (from-to)	207377
Journal	Micro and Nanostructures
Volume	170
DOIs	https://doi.org/10.1016/j.micrna.2022.207377
State	Published - Sep 1 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-09-12
Acknowledgements: This work was supported by the National Key R&D Program of China (Nos.2021YFB3601000, 2021YFB3601002), the National Natural Science Foundation of China (Nos. 62074069, 61734001, and 62104078), and the Science and Technology Developing Project of Jilin Province (Nos. 20200801013GH and 20220201065GX).

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title = "Realization of p-type conduction in compositionally graded quaternary AlInGaN",

abstract = "Quaternary AlInGaN alloy offers more degree of freedom in independently adjusting the band gap and lattice constant, and it shows the great potential in the fabrication of nitride optoelectronic and electronic devices. In this work, AlInGaN films were grown by metal-organic chemical vapor deposition and the p-type conduction was realized in compositionally graded quaternary AlInGaN. The element compositions in AlInGaN were confirmed by secondary ion mass spectrometry. The structural properties such as layer thickness, lattice polarity and surface morphology of the epilayers were characterized by cross-sectional scanning transmission electron microscopy and atomic force microscopy (AFM). The measured surface AFM images verify that the surface morphology of the quaternary AlInGaN film is smooth and it is free from V-shaped pits. Hall effect measurement results show that the grown graded AlInGaN is p-type with the hole concentration of ∼7.3 × 1016 cm−3 at room temperature. The realization of p-type conduction in AlInGaN can enrich the polarization engineering and the device structures of nitride semiconductors.",

author = "Chunlei Zhao and Gaoqiang Deng and Lidong Zhang and Yang Wang and Yunfei Niu and Jiaqi Yu and Zhifeng Shi and Guotong Du and Xiaohang Li and Yuantao Zhang",

note = "KAUST Repository Item: Exported on 2022-09-12 Acknowledgements: This work was supported by the National Key R&D Program of China (Nos.2021YFB3601000, 2021YFB3601002), the National Natural Science Foundation of China (Nos. 62074069, 61734001, and 62104078), and the Science and Technology Developing Project of Jilin Province (Nos. 20200801013GH and 20220201065GX).",

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doi = "10.1016/j.micrna.2022.207377",

language = "English (US)",

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T1 - Realization of p-type conduction in compositionally graded quaternary AlInGaN

AU - Zhao, Chunlei

AU - Deng, Gaoqiang

AU - Zhang, Lidong

AU - Wang, Yang

AU - Niu, Yunfei

AU - Yu, Jiaqi

AU - Shi, Zhifeng

AU - Du, Guotong

AU - Li, Xiaohang

AU - Zhang, Yuantao

N1 - KAUST Repository Item: Exported on 2022-09-12 Acknowledgements: This work was supported by the National Key R&D Program of China (Nos.2021YFB3601000, 2021YFB3601002), the National Natural Science Foundation of China (Nos. 62074069, 61734001, and 62104078), and the Science and Technology Developing Project of Jilin Province (Nos. 20200801013GH and 20220201065GX).

PY - 2022/9/1

Y1 - 2022/9/1

N2 - Quaternary AlInGaN alloy offers more degree of freedom in independently adjusting the band gap and lattice constant, and it shows the great potential in the fabrication of nitride optoelectronic and electronic devices. In this work, AlInGaN films were grown by metal-organic chemical vapor deposition and the p-type conduction was realized in compositionally graded quaternary AlInGaN. The element compositions in AlInGaN were confirmed by secondary ion mass spectrometry. The structural properties such as layer thickness, lattice polarity and surface morphology of the epilayers were characterized by cross-sectional scanning transmission electron microscopy and atomic force microscopy (AFM). The measured surface AFM images verify that the surface morphology of the quaternary AlInGaN film is smooth and it is free from V-shaped pits. Hall effect measurement results show that the grown graded AlInGaN is p-type with the hole concentration of ∼7.3 × 1016 cm−3 at room temperature. The realization of p-type conduction in AlInGaN can enrich the polarization engineering and the device structures of nitride semiconductors.

AB - Quaternary AlInGaN alloy offers more degree of freedom in independently adjusting the band gap and lattice constant, and it shows the great potential in the fabrication of nitride optoelectronic and electronic devices. In this work, AlInGaN films were grown by metal-organic chemical vapor deposition and the p-type conduction was realized in compositionally graded quaternary AlInGaN. The element compositions in AlInGaN were confirmed by secondary ion mass spectrometry. The structural properties such as layer thickness, lattice polarity and surface morphology of the epilayers were characterized by cross-sectional scanning transmission electron microscopy and atomic force microscopy (AFM). The measured surface AFM images verify that the surface morphology of the quaternary AlInGaN film is smooth and it is free from V-shaped pits. Hall effect measurement results show that the grown graded AlInGaN is p-type with the hole concentration of ∼7.3 × 1016 cm−3 at room temperature. The realization of p-type conduction in AlInGaN can enrich the polarization engineering and the device structures of nitride semiconductors.

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JF - Micro and Nanostructures

ER -

Realization of p-type conduction in compositionally graded quaternary AlInGaN

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