Realization of high-crystalline-quality thick m-plane GaInN film on 6H-SiC substrate by epitaxial lateral overgrowth

Ryota Senda, Aya Miura, Takemasa Hayakawa, Takeshi Kawashima, Daisuke Iida, Tetsuya Nagai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

A high-crystalline-quality thick m-plane Ga0.92In 0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (101̄0) in the 2θ/ω-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm. © 2007 The Japan Society of Applied Physics.
Original languageEnglish (US)
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number36-40
DOIs
StatePublished - Oct 12 2007
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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