Abstract
A high-crystalline-quality thick m-plane Ga0.92In 0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (101̄0) in the 2θ/ω-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm. © 2007 The Japan Society of Applied Physics.
Original language | English (US) |
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Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 46 |
Issue number | 36-40 |
DOIs | |
State | Published - Oct 12 2007 |
Externally published | Yes |
Bibliographical note
Generated from Scopus record by KAUST IRTS on 2023-09-21ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)