TY - JOUR
T1 - Realization of high-crystalline-quality and thick GaInN films
AU - Senda, Ryota
AU - Matsubara, Tetsuya
AU - Iida, Daisuke
AU - Iwaya, Motoaki
AU - Kamiyama, Satoshi
AU - Amano, Hiroshi
AU - Akasaki, Isamu
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2009/7/1
Y1 - 2009/7/1
N2 - We report on the growth of a completely relaxed, high- crystalline-quality, and thick GaInN layer on a grooved m-plane GaN template using sidewall epitaxial lateral overgrowth (SELO) technology. We grew GaInN-based multiple quantum wells (MQWs) on this GaInN layer, and the PL intensity was compared with that for the same GaInN/GaN MQWs on m-plane GaN grown by SELO. The PL peak intensity obtained from the GaInN/GaN MQW on the high-crystalline-quality thick GaInN on grooved GaN was approximately 1.7 times higher than that on the SELO m-plane GaN template. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - We report on the growth of a completely relaxed, high- crystalline-quality, and thick GaInN layer on a grooved m-plane GaN template using sidewall epitaxial lateral overgrowth (SELO) technology. We grew GaInN-based multiple quantum wells (MQWs) on this GaInN layer, and the PL intensity was compared with that for the same GaInN/GaN MQWs on m-plane GaN grown by SELO. The PL peak intensity obtained from the GaInN/GaN MQW on the high-crystalline-quality thick GaInN on grooved GaN was approximately 1.7 times higher than that on the SELO m-plane GaN template. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200880989
UR - http://www.scopus.com/inward/record.url?scp=67949090231&partnerID=8YFLogxK
U2 - 10.1002/pssc.200880989
DO - 10.1002/pssc.200880989
M3 - Article
SN - 1862-6351
VL - 6
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - SUPPL. 2
ER -