Realization of high-crystalline-quality and thick GaInN films

Ryota Senda, Tetsuya Matsubara, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report on the growth of a completely relaxed, high- crystalline-quality, and thick GaInN layer on a grooved m-plane GaN template using sidewall epitaxial lateral overgrowth (SELO) technology. We grew GaInN-based multiple quantum wells (MQWs) on this GaInN layer, and the PL intensity was compared with that for the same GaInN/GaN MQWs on m-plane GaN grown by SELO. The PL peak intensity obtained from the GaInN/GaN MQW on the high-crystalline-quality thick GaInN on grooved GaN was approximately 1.7 times higher than that on the SELO m-plane GaN template. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue numberSUPPL. 2
StatePublished - Jul 1 2009
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'Realization of high-crystalline-quality and thick GaInN films'. Together they form a unique fingerprint.

Cite this