The realization of high aspect ratio nano-pillar type photonic crystal using deep reactive ion etching was studied. The key parameters of the DRIE process were studied to overcome the problems associated with the realization of nano-pillar type photonic bandgap (PBG). It was observed that etch parameters measured across wafers of different bias designs revealed the limits of finite etching species and differences. Sidewall scallops that determines the roughness on the nano-pillars were also investigated for different height and depths obtained through varying process parameters.
- Deep reactive ion etching
- Nano-pillar type photonic crystal
- Sidewall profile control
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering