Realization of high aspect ratio nano-pillar type photonic crystal by deep reactive ion etching

H. G. Teo; M. B. Yu; J. Singh; N. Ranga; J. Li; W. C. Yew; A. Q. Liu

Realization of high aspect ratio nano-pillar type photonic crystal by deep reactive ion etching

H. G. Teo, M. B. Yu, J. Singh, N. Ranga, J. Li, W. C. Yew, A. Q. Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

The realization of high aspect ratio nano-pillar type photonic crystal using deep reactive ion etching was studied. The key parameters of the DRIE process were studied to overcome the problems associated with the realization of nano-pillar type photonic bandgap (PBG). It was observed that etch parameters measured across wafers of different bias designs revealed the limits of finite etching species and differences. Sidewall scallops that determines the roughness on the nano-pillars were also investigated for different height and depths obtained through varying process parameters.

Original language	English (US)
Pages (from-to)	83-84
Number of pages	2
Journal	LEOS Summer Topical Meeting
State	Published - 2004
Externally published	Yes
Event	2004 Digest of the LEOS Summer Topical Meetings - San Diego, CA, United States Duration: Jul 28 2004 → Jul 30 2004

Keywords

Deep reactive ion etching
Nano-pillar type photonic crystal
Scalloping
Sidewall profile control

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

@article{663e1879d9d143238aed0f9e58a6dad1,

title = "Realization of high aspect ratio nano-pillar type photonic crystal by deep reactive ion etching",

abstract = "The realization of high aspect ratio nano-pillar type photonic crystal using deep reactive ion etching was studied. The key parameters of the DRIE process were studied to overcome the problems associated with the realization of nano-pillar type photonic bandgap (PBG). It was observed that etch parameters measured across wafers of different bias designs revealed the limits of finite etching species and differences. Sidewall scallops that determines the roughness on the nano-pillars were also investigated for different height and depths obtained through varying process parameters.",

keywords = "Deep reactive ion etching, Nano-pillar type photonic crystal, Scalloping, Sidewall profile control",

author = "Teo, {H. G.} and Yu, {M. B.} and J. Singh and N. Ranga and J. Li and Yew, {W. C.} and Liu, {A. Q.}",

year = "2004",

language = "English (US)",

pages = "83--84",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 Digest of the LEOS Summer Topical Meetings ; Conference date: 28-07-2004 Through 30-07-2004",

}

TY - JOUR

T1 - Realization of high aspect ratio nano-pillar type photonic crystal by deep reactive ion etching

AU - Teo, H. G.

AU - Yu, M. B.

AU - Singh, J.

AU - Ranga, N.

AU - Li, J.

AU - Yew, W. C.

AU - Liu, A. Q.

PY - 2004

Y1 - 2004

N2 - The realization of high aspect ratio nano-pillar type photonic crystal using deep reactive ion etching was studied. The key parameters of the DRIE process were studied to overcome the problems associated with the realization of nano-pillar type photonic bandgap (PBG). It was observed that etch parameters measured across wafers of different bias designs revealed the limits of finite etching species and differences. Sidewall scallops that determines the roughness on the nano-pillars were also investigated for different height and depths obtained through varying process parameters.

AB - The realization of high aspect ratio nano-pillar type photonic crystal using deep reactive ion etching was studied. The key parameters of the DRIE process were studied to overcome the problems associated with the realization of nano-pillar type photonic bandgap (PBG). It was observed that etch parameters measured across wafers of different bias designs revealed the limits of finite etching species and differences. Sidewall scallops that determines the roughness on the nano-pillars were also investigated for different height and depths obtained through varying process parameters.

KW - Deep reactive ion etching

KW - Nano-pillar type photonic crystal

KW - Scalloping

KW - Sidewall profile control

UR - http://www.scopus.com/inward/record.url?scp=4544325900&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:4544325900

SN - 1099-4742

SP - 83

EP - 84

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - 2004 Digest of the LEOS Summer Topical Meetings

Y2 - 28 July 2004 through 30 July 2004

ER -

Realization of high aspect ratio nano-pillar type photonic crystal by deep reactive ion etching

Abstract

Keywords

ASJC Scopus subject areas

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