Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

Emmanuel U. Onyegam; Dabraj Sarkar; Mohamed M. Hilali; Sayan Saha; Leo Mathew; Rajesh A. Rao; Ryan S. Smith; Dewei Xu; Dharmesh Jawarani; Ricardo Garcia; Moses Ainom; Sanjay K. Banerjee

doi:10.1063/1.4871503

Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

Emmanuel U. Onyegam, Dabraj Sarkar, Mohamed M. Hilali, Sayan Saha, Leo Mathew, Rajesh A. Rao, Ryan S. Smith, Dewei Xu, Dharmesh Jawarani, Ricardo Garcia, Moses Ainom, Sanjay K. Banerjee

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

Original language	English (US)
Pages (from-to)	153902
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4871503
State	Published - Apr 14 2014
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank William Jesse James for his technical support on the RPCVD. This work was funded partly by U.S. Department of Energy Sunshot Award No. DE-EE0005404, KAUST, and BAPVC program.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{b6272416747944e188e7f6373844c31b,

title = "Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates",

abstract = "Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. {\textcopyright} 2014 AIP Publishing LLC.",

author = "Onyegam, {Emmanuel U.} and Dabraj Sarkar and Hilali, {Mohamed M.} and Sayan Saha and Leo Mathew and Rao, {Rajesh A.} and Smith, {Ryan S.} and Dewei Xu and Dharmesh Jawarani and Ricardo Garcia and Moses Ainom and Banerjee, {Sanjay K.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank William Jesse James for his technical support on the RPCVD. This work was funded partly by U.S. Department of Energy Sunshot Award No. DE-EE0005404, KAUST, and BAPVC program. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2014",

month = apr,

day = "14",

doi = "10.1063/1.4871503",

language = "English (US)",

volume = "104",

pages = "153902",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

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TY - JOUR

T1 - Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

AU - Onyegam, Emmanuel U.

AU - Sarkar, Dabraj

AU - Hilali, Mohamed M.

AU - Saha, Sayan

AU - Mathew, Leo

AU - Rao, Rajesh A.

AU - Smith, Ryan S.

AU - Xu, Dewei

AU - Jawarani, Dharmesh

AU - Garcia, Ricardo

AU - Ainom, Moses

AU - Banerjee, Sanjay K.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank William Jesse James for his technical support on the RPCVD. This work was funded partly by U.S. Department of Energy Sunshot Award No. DE-EE0005404, KAUST, and BAPVC program. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2014/4/14

Y1 - 2014/4/14

N2 - Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

AB - Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

UR - http://hdl.handle.net/10754/599456

UR - http://aip.scitation.org/doi/10.1063/1.4871503

UR - http://www.scopus.com/inward/record.url?scp=84899652324&partnerID=8YFLogxK

U2 - 10.1063/1.4871503

DO - 10.1063/1.4871503

M3 - Article

SN - 0003-6951

VL - 104

SP - 153902

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

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