Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

Emmanuel U. Onyegam, Dabraj Sarkar, Mohamed M. Hilali, Sayan Saha, Leo Mathew, Rajesh A. Rao, Ryan S. Smith, Dewei Xu, Dharmesh Jawarani, Ricardo Garcia, Moses Ainom, Sanjay K. Banerjee

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4 Scopus citations


Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.
Original languageEnglish (US)
Pages (from-to)153902
JournalApplied Physics Letters
Issue number15
StatePublished - Apr 14 2014
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank William Jesse James for his technical support on the RPCVD. This work was funded partly by U.S. Department of Energy Sunshot Award No. DE-EE0005404, KAUST, and BAPVC program.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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