Real time monitoring of pentacene growth on Si O2 from a supersonic source

S. Hong*, A. Amassian, A. R. Woll, S. Bhargava, J. D. Ferguson, G. G. Malliaras, J. D. Brock, J. R. Engstrom

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations


Thin film growth of pentacene on SiO2 using a supersonic source has been investigated with in situ real time synchrotron x-ray scattering and ex situ atomic force microscopy, focusing on the effects of incident kinetic energy Ei and growth rate GR on the evolution of surface roughness and the crystalline structure of the thin films. For the conditions examined here, Ei =2.5-7.2 eV and GR=0.0015-0.2 ML s-1, the thin film phase is always observed. We find that while the effect of Ei on interlayer transport is minimal, at high growth rates, slightly smoother films are observed.

Original languageEnglish (US)
Article number253304
JournalApplied Physics Letters
Issue number25
StatePublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Real time monitoring of pentacene growth on Si O2 from a supersonic source'. Together they form a unique fingerprint.

Cite this