Real-index guided blue-green laser diode with small beam astigmatism fabricated using ZnO buried structure

Toshiya Yokogawa; Satoshi Kamiyama; Shigeo Yoshii; Kazuhiro Ohkawa; Ayumu Tsujimura; Yoichi Sasai

doi:10.1143/jjap.35.l314

Real-index guided blue-green laser diode with small beam astigmatism fabricated using ZnO buried structure

Toshiya Yokogawa^*, Satoshi Kamiyama, Shigeo Yoshii, Kazuhiro Ohkawa, Ayumu Tsujimura, Yoichi Sasai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Real index-guided blue-green lasers with a small beam astigmatism have been demonstrated. A ZnO buried layer with low refractive index and high resistivity was used to obtain the real index-guided structure. The ridge stripe was fabricated by electron cyclotron resonance plasma etching with Cl₂/H₂ discharge which realizes anisotropic etching. The beam astigmatism value for the ZnO buried ridge waveguide laser was measured to be less than 0.5 μm as a result of the real index-guiding effect, in contrast to 25 μm for the conventional gain-guided laser. A stable single lateral mode operation was also obtained at up to 18 mW for the real index-guided laser.

Original language	English (US)
Pages (from-to)	L314-L316
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	35
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.35.l314
State	Published - Mar 1 1996
Externally published	Yes

Keywords

II-VI compounds
Index-guided laser
MBE
Ridge waveguide
Semiconductor laser
ZnCdSe
ZnMgSSe
ZnSSe

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.35.l314

Cite this

@article{33bc2363534645ccaa4577968f28051e,

title = "Real-index guided blue-green laser diode with small beam astigmatism fabricated using ZnO buried structure",

abstract = "Real index-guided blue-green lasers with a small beam astigmatism have been demonstrated. A ZnO buried layer with low refractive index and high resistivity was used to obtain the real index-guided structure. The ridge stripe was fabricated by electron cyclotron resonance plasma etching with Cl2/H2 discharge which realizes anisotropic etching. The beam astigmatism value for the ZnO buried ridge waveguide laser was measured to be less than 0.5 μm as a result of the real index-guiding effect, in contrast to 25 μm for the conventional gain-guided laser. A stable single lateral mode operation was also obtained at up to 18 mW for the real index-guided laser.",

keywords = "II-VI compounds, Index-guided laser, MBE, Ridge waveguide, Semiconductor laser, ZnCdSe, ZnMgSSe, ZnSSe",

author = "Toshiya Yokogawa and Satoshi Kamiyama and Shigeo Yoshii and Kazuhiro Ohkawa and Ayumu Tsujimura and Yoichi Sasai",

year = "1996",

month = mar,

day = "1",

doi = "10.1143/jjap.35.l314",

language = "English (US)",

volume = "35",

pages = "L314--L316",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 A",

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TY - JOUR

T1 - Real-index guided blue-green laser diode with small beam astigmatism fabricated using ZnO buried structure

AU - Yokogawa, Toshiya

AU - Kamiyama, Satoshi

AU - Yoshii, Shigeo

AU - Ohkawa, Kazuhiro

AU - Tsujimura, Ayumu

AU - Sasai, Yoichi

PY - 1996/3/1

Y1 - 1996/3/1

N2 - Real index-guided blue-green lasers with a small beam astigmatism have been demonstrated. A ZnO buried layer with low refractive index and high resistivity was used to obtain the real index-guided structure. The ridge stripe was fabricated by electron cyclotron resonance plasma etching with Cl2/H2 discharge which realizes anisotropic etching. The beam astigmatism value for the ZnO buried ridge waveguide laser was measured to be less than 0.5 μm as a result of the real index-guiding effect, in contrast to 25 μm for the conventional gain-guided laser. A stable single lateral mode operation was also obtained at up to 18 mW for the real index-guided laser.

AB - Real index-guided blue-green lasers with a small beam astigmatism have been demonstrated. A ZnO buried layer with low refractive index and high resistivity was used to obtain the real index-guided structure. The ridge stripe was fabricated by electron cyclotron resonance plasma etching with Cl2/H2 discharge which realizes anisotropic etching. The beam astigmatism value for the ZnO buried ridge waveguide laser was measured to be less than 0.5 μm as a result of the real index-guiding effect, in contrast to 25 μm for the conventional gain-guided laser. A stable single lateral mode operation was also obtained at up to 18 mW for the real index-guided laser.

KW - II-VI compounds

KW - Index-guided laser

KW - MBE

KW - Ridge waveguide

KW - Semiconductor laser

KW - ZnCdSe

KW - ZnMgSSe

KW - ZnSSe

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U2 - 10.1143/jjap.35.l314

DO - 10.1143/jjap.35.l314

M3 - Article

AN - SCOPUS:0030105654

SN - 0021-4922

VL - 35

SP - L314-L316

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 A

ER -

Real-index guided blue-green laser diode with small beam astigmatism fabricated using ZnO buried structure

Abstract

Keywords

ASJC Scopus subject areas

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