Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3

Desheng Kong; Judy J. Cha; Keji Lai; Hailin Peng; James G. Analytis; Stefan Meister; Yulin Chen; Hai-Jun Zhang; Ian R. Fisher; Zhi-Xun Shen; Yi Cui

doi:10.1021/nn200556h

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3

Desheng Kong, Judy J. Cha, Keji Lai, Hailin Peng, James G. Analytis, Stefan Meister, Yulin Chen, Hai-Jun Zhang, Ian R. Fisher, Zhi-Xun Shen, Yi Cui

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Abstract

Bismuth selenide (Bi2Se3) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi2Se3 gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi2Se3 by transport measurements. © 2011 American Chemical Society.

Original language	English (US)
Pages (from-to)	4698-4703
Number of pages	6
Journal	ACS Nano
Volume	5
Issue number	6
DOIs	https://doi.org/10.1021/nn200556h
State	Published - May 23 2011
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-I1-001-12, KLIS-F1-033-02
Acknowledgements: Y.C. acknowledges the supported from the Keck Foundation and King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-I1-001-12). K.L. acknowledges the KAUST Postdoctoral Fellowship support No. KLIS-F1-033-02. J.G.A. and I.R.F. acknowledge support from the Department of Energy, Office of Basic Energy Sciences, under contract DE-AC02-76SF00515.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3",

abstract = "Bismuth selenide (Bi2Se3) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi2Se3 gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi2Se3 by transport measurements. {\textcopyright} 2011 American Chemical Society.",

author = "Desheng Kong and Cha, {Judy J.} and Keji Lai and Hailin Peng and Analytis, {James G.} and Stefan Meister and Yulin Chen and Hai-Jun Zhang and Fisher, {Ian R.} and Zhi-Xun Shen and Yi Cui",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-I1-001-12, KLIS-F1-033-02 Acknowledgements: Y.C. acknowledges the supported from the Keck Foundation and King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-I1-001-12). K.L. acknowledges the KAUST Postdoctoral Fellowship support No. KLIS-F1-033-02. J.G.A. and I.R.F. acknowledge support from the Department of Energy, Office of Basic Energy Sciences, under contract DE-AC02-76SF00515. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.1021/nn200556h",

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T1 - Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3

AU - Kong, Desheng

AU - Cha, Judy J.

AU - Lai, Keji

AU - Peng, Hailin

AU - Analytis, James G.

AU - Meister, Stefan

AU - Chen, Yulin

AU - Zhang, Hai-Jun

AU - Fisher, Ian R.

AU - Shen, Zhi-Xun

AU - Cui, Yi

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-I1-001-12, KLIS-F1-033-02 Acknowledgements: Y.C. acknowledges the supported from the Keck Foundation and King Abdullah University of Science and Technology (KAUST) Investigator Award (No. KUS-I1-001-12). K.L. acknowledges the KAUST Postdoctoral Fellowship support No. KLIS-F1-033-02. J.G.A. and I.R.F. acknowledge support from the Department of Energy, Office of Basic Energy Sciences, under contract DE-AC02-76SF00515. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2011/5/23

Y1 - 2011/5/23

N2 - Bismuth selenide (Bi2Se3) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi2Se3 gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi2Se3 by transport measurements. © 2011 American Chemical Society.

AB - Bismuth selenide (Bi2Se3) is a topological insulator with metallic surface states (SS) residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n-type doped due to selenium vacancies. Furthermore, it is discovered from experiments on bulk single crystals that Bi2Se3 gets additional n-type doping after exposure to the atmosphere, thereby reducing the relative contribution of SS in total conductivity. In this article, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological SS. Appropriate surface passivation or encapsulation may be required to probe topological SS of Bi2Se3 by transport measurements. © 2011 American Chemical Society.

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JO - ACS Nano

JF - ACS Nano

IS - 6

ER -

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3

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