Rapid photonic curing of solution-processed In 2 O 3 layers on flexible substrates

Nicholas M. Twyman, Kornelius Tetzner, Thomas D. Anthopoulos, David J. Payne, Anna Regoutz*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


In 2 O 3 is one of the most important semiconducting metal oxides primarily because of its wide band gap, high electron mobility and processing versatility. To this end, high-quality thin films of In 2 O 3 can be prepared using scalable and inexpensive solution-based deposition methods, hence making it attractive for application in a number of emerging electronic applications. However, traditional solution processing often requires high temperature and lengthy annealing steps, making it impossible to use in combination with temperature-sensitive plastic substrates, which would be desired for numerous emerging flexible device applications. Here, rapid photonic curing of In 2 O 3 layers is explored as an alternative to thermal annealing. Oxide thin films are successfully prepared on a range of substrates, including glass, polyimide, and polyethylene naphthalate. The effect of substrate and post-processing treatment on the morphology, surface chemistry, and electronic properties is investigated by atomic force microscopy and X-ray photoelectron spectroscopy. Systematic trends are identified, particularly in the degree of conversion of the precursor and its influence on the electronic structure.

Original languageEnglish (US)
Pages (from-to)974-979
Number of pages6
JournalApplied Surface Science
StatePublished - Jun 15 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.


  • Atomic force microscopy
  • Photonic curing
  • Sol-gel
  • Transparent conducting oxide
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • General Physics and Astronomy
  • Surfaces and Interfaces


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