We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we demonstrated successful conversion of the precursor to In2O3 and its subsequent implementation in n-channel transistors with electron mobility up to 13 cm2 V−1 s−1. Importantly, the process does not require thermal annealing making it compatible with temperature sensitive materials such as plastic. On the other hand, the spatial conversion/densification of the sol-gel layer eliminates additional process steps associated with semiconductor patterning and hence significantly reduces fabrication complexity and cost. Our work demonstrates unambiguously that laser-induced photochemical conversion of sol-gel metal oxide precursors can be rapid and suitable for the manufacturing of large-area electronics.
Bibliographical noteFunding Information:
This work was conducted under the Pathfinder project LAFLEXEL, that was funded by the Centre of Innovative Manufacturing for Large Area Electronics (CIMLAE) and hence in extension by the EPSRC. K. T. and T. D. A. also acknowledge financial support from the People Programme (Marie Curie Actions) of the European Union's Framework Programme Horizon2020: “Flexible Complementary Hybrid Integrated Circuits” (FlexCHIC), grant agreement no. 658563
© The Royal Society of Chemistry.
ASJC Scopus subject areas
- Materials Chemistry