Rapid growth of II-VI laser structures by compound-source molecular beam epitaxy

Ayumu Tsujimura*, Takashi Nishikawa, Kazuhiro Ohkawa, Yoichi Sasai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Molecular beam epitaxy (MBE) at high growth rate more than twice compared with the conventional rate was investigated for ZnSe layers and related laser structures by using polycrystalline compounds as source materials. A clearly-streaked (2 x 1) pattern indicating Se-stabilized surface was observed by reflection of high-energy electron diffraction during the growth of ZnSe:N layers at 260 - 360 degrees Celsius with around 2 micrometer/h. Full width at half-maximum of double crystal x-ray rocking curve was as narrow as 85 arc sec for a 6.5- micrometer-thick layer with mirror-like surface morphology. ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure lasers operated at room temperature were obtained with a time required to grow of 80 min. II-VI layers grown by the rapid compound-source (CS) MBE had high crystalline quality comparable to that of the layers grown at the conventional growth rate. CSMBE has the surface migration enhancement effect at the growth front due to high kinetic energy of source molecules. The CSMBE technique solved the problem of low productivity for the conventional II-VI MBE growth.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Number of pages8
StatePublished - 1996
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA
Duration: Jan 29 1996Feb 2 1996


OtherPhysics and Simulation of Optoelectronic Devices IV
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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