Rapid and up-scalable manufacturing of gigahertz nanogap diodes

Kalaivanan Loganathan, Hendrik Faber, Emre Yengel, Akmaral Seitkhan, Azamat Bakytbekov, Emre Yarali, Begimai Adilbekova, Afnan AlBatati, Yuanbao Lin, Zainab Felemban, Shuai Yang, Weiwei Li, Dimitra G Georgiadou, Atif Shamim, Elefterios Lidorikis, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

Abstract

The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned 100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.
Original languageEnglish (US)
JournalNature Communications
Volume13
Issue number1
DOIs
StatePublished - Jun 7 2022

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)
  • Chemistry(all)
  • Physics and Astronomy(all)

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