Abstract
The massive deployment of fifth generation and internet of things technologies requires precise and high-throughput fabrication techniques for the mass production of radio frequency electronics. We use printable indium-gallium-zinc-oxide semiconductor in spontaneously formed self-aligned 100 GHz. Rectifier circuits constructed with these co-planar diodes can operate at ~47 GHz (extrinsic), making them the fastest large-area electronic devices demonstrated to date.
Original language | English (US) |
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Journal | Nature Communications |
Volume | 13 |
Issue number | 1 |
DOIs | |
State | Published - Jun 7 2022 |
Bibliographical note
KAUST Repository Item: Exported on 2022-06-09Acknowledged KAUST grant number(s): OSR-2020-CRG9–4347, OSR-2018-CARF/CCF-3079
Acknowledgements: This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079 and Award No: OSR-2020-CRG9–4347. T.D.A. and K.L. would like to acknowledge for the illustration created by Ivan Gromicho, scientific illustrator, research communication and publication services, office of the vice president for research, King Abdullah University of Science and Technology (KAUST).
ASJC Scopus subject areas
- General Biochemistry, Genetics and Molecular Biology
- General Chemistry
- General Physics and Astronomy