Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide

P. J. Boyce; J. J. Davies; D. Wolverson; K. Ohkawa; T. Mitsuyu

Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide

P. J. Boyce^*, J. J. Davies, D. Wolverson, K. Ohkawa, T. Mitsuyu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

When ZnSe is doped with nitrogen during growth by molecular beam epitaxy to produce p-type material the effective acceptor concentration is limited by the formation of a new type of compensating donor centre at a depth of about 50 meV beneath the conduction band. Raman spectroscopy has been used to show that the nature of the nitrogen acceptors themselves is unchanged at high doping levels and, by means of spin-flip scattering, to provide independent confirmation of the existence of the new donor, which has a g-value of 1.36 ± 0.07.

Original language	English (US)
Pages (from-to)	251-254
Number of pages	4
Journal	Materials Science Forum
Volume	182-184
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)

Cite this

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title = "Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide",

abstract = "When ZnSe is doped with nitrogen during growth by molecular beam epitaxy to produce p-type material the effective acceptor concentration is limited by the formation of a new type of compensating donor centre at a depth of about 50 meV beneath the conduction band. Raman spectroscopy has been used to show that the nature of the nitrogen acceptors themselves is unchanged at high doping levels and, by means of spin-flip scattering, to provide independent confirmation of the existence of the new donor, which has a g-value of 1.36 ± 0.07.",

author = "Boyce, {P. J.} and Davies, {J. J.} and D. Wolverson and K. Ohkawa and T. Mitsuyu",

year = "1995",

language = "English (US)",

volume = "182-184",

pages = "251--254",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

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TY - JOUR

T1 - Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide

AU - Boyce, P. J.

AU - Davies, J. J.

AU - Wolverson, D.

AU - Ohkawa, K.

AU - Mitsuyu, T.

PY - 1995

Y1 - 1995

N2 - When ZnSe is doped with nitrogen during growth by molecular beam epitaxy to produce p-type material the effective acceptor concentration is limited by the formation of a new type of compensating donor centre at a depth of about 50 meV beneath the conduction band. Raman spectroscopy has been used to show that the nature of the nitrogen acceptors themselves is unchanged at high doping levels and, by means of spin-flip scattering, to provide independent confirmation of the existence of the new donor, which has a g-value of 1.36 ± 0.07.

AB - When ZnSe is doped with nitrogen during growth by molecular beam epitaxy to produce p-type material the effective acceptor concentration is limited by the formation of a new type of compensating donor centre at a depth of about 50 meV beneath the conduction band. Raman spectroscopy has been used to show that the nature of the nitrogen acceptors themselves is unchanged at high doping levels and, by means of spin-flip scattering, to provide independent confirmation of the existence of the new donor, which has a g-value of 1.36 ± 0.07.

UR - http://www.scopus.com/inward/record.url?scp=18544412365&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:18544412365

SN - 0255-5476

VL - 182-184

SP - 251

EP - 254

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide

Abstract

ASJC Scopus subject areas

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