Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)

Dimitra G Georgiadou, Nilushi Wijeyasinghe, Olga Solomeshch, Nir Tessler, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al–Au nanogap electrodes (100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.
Original languageEnglish (US)
JournalACS Applied Materials & Interfaces
StatePublished - Jun 1 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-06-03
Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079, OSR-2019-CRG8-4095.3
Acknowledgements: T.D.A. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079 and No: OSR-2019-CRG8-4095.3 and from the European Research Council (ERC) AMPRO (Grant No. 280221). D.G.G. acknowledges the financial support from the European Union Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement 706707.

ASJC Scopus subject areas

  • General Materials Science


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