Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)

Dimitra G Georgiadou; Nilushi Wijeyasinghe; Olga Solomeshch; Nir Tessler; Thomas D. Anthopoulos

doi:10.1021/acsami.1c22856

Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)

Dimitra G Georgiadou, Nilushi Wijeyasinghe, Olga Solomeshch, Nir Tessler, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al–Au nanogap electrodes (100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.

Original language	English (US)
Journal	ACS Applied Materials & Interfaces
DOIs	https://doi.org/10.1021/acsami.1c22856
State	Published - Jun 1 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-06-03
Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079, OSR-2019-CRG8-4095.3
Acknowledgements: T.D.A. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079 and No: OSR-2019-CRG8-4095.3 and from the European Research Council (ERC) AMPRO (Grant No. 280221). D.G.G. acknowledges the financial support from the European Union Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement 706707.

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.1c22856

https://repository.kaust.edu.sa/bitstream/10754/678490/1/acsami.1c22856.pdf

Cite this

@article{39c8fec8add74aa58b9cc7f93e6868c7,

title = "Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)",

abstract = "Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al–Au nanogap electrodes (100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.",

author = "Georgiadou, {Dimitra G} and Nilushi Wijeyasinghe and Olga Solomeshch and Nir Tessler and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2022-06-03 Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079, OSR-2019-CRG8-4095.3 Acknowledgements: T.D.A. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079 and No: OSR-2019-CRG8-4095.3 and from the European Research Council (ERC) AMPRO (Grant No. 280221). D.G.G. acknowledges the financial support from the European Union Horizon 2020 research and innovation program under the Marie Sk{\l}odowska-Curie grant agreement 706707.",

year = "2022",

month = jun,

day = "1",

doi = "10.1021/acsami.1c22856",

language = "English (US)",

journal = "ACS Applied Materials & Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

}

TY - JOUR

T1 - Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)

AU - Georgiadou, Dimitra G

AU - Wijeyasinghe, Nilushi

AU - Solomeshch, Olga

AU - Tessler, Nir

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2022-06-03 Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079, OSR-2019-CRG8-4095.3 Acknowledgements: T.D.A. acknowledges the support from the King Abdullah University of Science and Technology (KAUST) Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079 and No: OSR-2019-CRG8-4095.3 and from the European Research Council (ERC) AMPRO (Grant No. 280221). D.G.G. acknowledges the financial support from the European Union Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement 706707.

PY - 2022/6/1

Y1 - 2022/6/1

N2 - Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al–Au nanogap electrodes (100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.

AB - Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities of existing p-type semiconducting materials that are compatible with low-temperature, flexible, substrate-friendly processes. Herein, we report on CuSCN Schottky diodes, where the semiconductor is processed from solution, featuring coplanar Al–Au nanogap electrodes (100 mV for a VIN = ±5 V at the commercially relevant frequency of 13.56 MHz. The enhanced diode and circuit performance is attributed to the improved charge transport across CuSCN induced by C60F48. The ensuing diode technology can be used in flexible complementary circuits targeting low-energy-budget applications for the emerging internet of things device ecosystem.

UR - http://hdl.handle.net/10754/678490

UR - https://pubs.acs.org/doi/10.1021/acsami.1c22856

U2 - 10.1021/acsami.1c22856

DO - 10.1021/acsami.1c22856

M3 - Article

C2 - 35647869

SN - 1944-8244

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

ER -

Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)

Abstract

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