Radiation response of nanometric HfSiON/ SiO2 gate stacks

R. A.B. Devine; M. A. Quevedo-Lopez; H. Alshareef

doi:10.1063/1.2838186

Radiation response of nanometric HfSiON/ SiO₂ gate stacks

R. A.B. Devine, M. A. Quevedo-Lopez, H. Alshareef

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The x-ray irradiation sensitivity of hafnium silicon oxynitride/silicon oxide dielectric stacks deposited on Si has been measured. Clear evidence for trapped negative charge buildup is found for samples biased positively during irradiation and also for negative bias with or without radiation. A two phase buildup of trapped negative charge is observed in the case of irradiation in the presence of positive bias suggestive of different rates of electron trapping in the two layers.

Original language	English (US)
Article number	064104
Journal	Journal of Applied Physics
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.2838186
State	Published - 2008
Externally published	Yes

Bibliographical note

Funding Information:
This work was partially supported through the USAFRL Contract No. FA9453-06-C-0367.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.2838186

Cite this

@article{48651a8a965441aab509a18eefd1d841,

title = "Radiation response of nanometric HfSiON/ SiO2 gate stacks",

abstract = "The x-ray irradiation sensitivity of hafnium silicon oxynitride/silicon oxide dielectric stacks deposited on Si has been measured. Clear evidence for trapped negative charge buildup is found for samples biased positively during irradiation and also for negative bias with or without radiation. A two phase buildup of trapped negative charge is observed in the case of irradiation in the presence of positive bias suggestive of different rates of electron trapping in the two layers.",

author = "Devine, {R. A.B.} and Quevedo-Lopez, {M. A.} and H. Alshareef",

note = "Funding Information: This work was partially supported through the USAFRL Contract No. FA9453-06-C-0367.",

year = "2008",

doi = "10.1063/1.2838186",

language = "English (US)",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "6",

}

TY - JOUR

T1 - Radiation response of nanometric HfSiON/ SiO2 gate stacks

AU - Devine, R. A.B.

AU - Quevedo-Lopez, M. A.

AU - Alshareef, H.

N1 - Funding Information: This work was partially supported through the USAFRL Contract No. FA9453-06-C-0367.

PY - 2008

Y1 - 2008

N2 - The x-ray irradiation sensitivity of hafnium silicon oxynitride/silicon oxide dielectric stacks deposited on Si has been measured. Clear evidence for trapped negative charge buildup is found for samples biased positively during irradiation and also for negative bias with or without radiation. A two phase buildup of trapped negative charge is observed in the case of irradiation in the presence of positive bias suggestive of different rates of electron trapping in the two layers.

AB - The x-ray irradiation sensitivity of hafnium silicon oxynitride/silicon oxide dielectric stacks deposited on Si has been measured. Clear evidence for trapped negative charge buildup is found for samples biased positively during irradiation and also for negative bias with or without radiation. A two phase buildup of trapped negative charge is observed in the case of irradiation in the presence of positive bias suggestive of different rates of electron trapping in the two layers.

UR - http://www.scopus.com/inward/record.url?scp=41549106748&partnerID=8YFLogxK

U2 - 10.1063/1.2838186

DO - 10.1063/1.2838186

M3 - Article

AN - SCOPUS:41549106748

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 064104

ER -