Radiation response of nanometric HfSiON/ SiO2 gate stacks

R. A.B. Devine, M. A. Quevedo-Lopez, H. Alshareef

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The x-ray irradiation sensitivity of hafnium silicon oxynitride/silicon oxide dielectric stacks deposited on Si has been measured. Clear evidence for trapped negative charge buildup is found for samples biased positively during irradiation and also for negative bias with or without radiation. A two phase buildup of trapped negative charge is observed in the case of irradiation in the presence of positive bias suggestive of different rates of electron trapping in the two layers.

Original languageEnglish (US)
Article number064104
JournalJournal of Applied Physics
Issue number6
StatePublished - 2008
Externally publishedYes

Bibliographical note

Funding Information:
This work was partially supported through the USAFRL Contract No. FA9453-06-C-0367.

ASJC Scopus subject areas

  • General Physics and Astronomy


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