Quasineutral limit of a standard drift diffusion model for semiconductors

Ling Xiao; Peter A. Markowich; Shu Wang

Quasineutral limit of a standard drift diffusion model for semiconductors

Ling Xiao^*, Peter A. Markowich, Shu Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The limit of vanishing Debye length (charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without pn-junction (i.e. without a bipolar background charge) is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using the weak compactness argument and the so-called entropy functional which yields appropriate uniform estimates.

Original language	English (US)
Pages (from-to)	33-41
Number of pages	9
Journal	Science in China, Series A: Mathematics, Physics, Astronomy
Volume	45
Issue number	1
State	Published - Jan 2002
Externally published	Yes

Keywords

Entropy method
Nonlinear drift-diffusion equations
Quasineutral limit

ASJC Scopus subject areas

General Mathematics

Cite this

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title = "Quasineutral limit of a standard drift diffusion model for semiconductors",

abstract = "The limit of vanishing Debye length (charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without pn-junction (i.e. without a bipolar background charge) is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using the weak compactness argument and the so-called entropy functional which yields appropriate uniform estimates.",

keywords = "Entropy method, Nonlinear drift-diffusion equations, Quasineutral limit",

author = "Ling Xiao and Markowich, {Peter A.} and Shu Wang",

year = "2002",

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language = "English (US)",

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journal = "Science in China, Series A: Mathematics, Physics, Astronomy",

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T1 - Quasineutral limit of a standard drift diffusion model for semiconductors

AU - Xiao, Ling

AU - Markowich, Peter A.

AU - Wang, Shu

PY - 2002/1

Y1 - 2002/1

N2 - The limit of vanishing Debye length (charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without pn-junction (i.e. without a bipolar background charge) is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using the weak compactness argument and the so-called entropy functional which yields appropriate uniform estimates.

AB - The limit of vanishing Debye length (charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without pn-junction (i.e. without a bipolar background charge) is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using the weak compactness argument and the so-called entropy functional which yields appropriate uniform estimates.

KW - Entropy method

KW - Nonlinear drift-diffusion equations

KW - Quasineutral limit

UR - http://www.scopus.com/inward/record.url?scp=0036377443&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036377443

SN - 1006-9283

VL - 45

SP - 33

EP - 41

JO - Science in China, Series A: Mathematics, Physics, Astronomy

JF - Science in China, Series A: Mathematics, Physics, Astronomy

IS - 1

ER -

Quasineutral limit of a standard drift diffusion model for semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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