Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors

Ingenuin Gasser*, Ling Hsiao, Peter A. Markowich, Shu Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

The limit of the vanishing Debye length (the charge neutral limit) in a non-linear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates.

Original languageEnglish (US)
Pages (from-to)184-199
Number of pages16
JournalJournal of Mathematical Analysis and Applications
Volume268
Issue number1
DOIs
StatePublished - Apr 1 2002
Externally publishedYes

Bibliographical note

Funding Information:
The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit 1Supported by the EU-funded TMR-network Asymptotic Methods in Kinetic Theory (Contract Number ERB FMRX CT97 0157). 2Supported by the Austrian–Chinese Scientific–Technical Cooperation Agreement. 3Supported by the MST and NNSF of China. 4Supported by the Postdoctoral Science Foundation and NYNSF (Grant 10001034) of China and by the Morningside Mathematics Center.

Keywords

  • Entropy method
  • Nonlinear drift-diffusion equations
  • Quasi-neutral limit

ASJC Scopus subject areas

  • Analysis
  • Applied Mathematics

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