Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors

Xiao Tang; Kuang-Hui Li; Yue Zhao; Yanxin Sui; Huili Liang; Zeng Liu; Che-Hao Liao; Wedyan Babatain; Rongyu Lin; Chuanju Wang; Yi Lu; Feras S. Alqatari; Zengxia Mei; Weihua Tang; Xiaohang Li

doi:10.1021/acsami.1c15560

Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors

Xiao Tang, Kuang-Hui Li, Yue Zhao, Yanxin Sui, Huili Liang, Zeng Liu, Che-Hao Liao, Wedyan Babatain, Rongyu Lin, Chuanju Wang, Yi Lu, Feras S. Alqatari, Zengxia Mei, Weihua Tang, Xiaohang Li

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements. We demonstrate the epitaxial growth of β-Ga2O3(-201) thin films on flexible CeO2(001)-buffered Hastelloy tape. The results indicate that CeO2(001) has a small bi-axial lattice mismatch with β-Ga2O3(-201), inducing simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated on the epitaxial β-Ga2O3-coated tape. Measurements reveal that the photodetectors have a responsivity of 4 × 104 mA/W, with an on/off ratio reaching 1000 under 254 nm incident light and 5 V bias voltage. Such a photoelectrical performance is within the mainstream level of β-Ga2O3-based photodetectors using conventional rigid single-crystal substrates. More importantly, it remained robust against more than 20,000 bending test cycles. Moreover, the technique paves the way for the direct in situ epitaxial growth of other flexible oxide semiconductor devices in the future.

Original language	English (US)
Journal	ACS Applied Materials & Interfaces
DOIs	https://doi.org/10.1021/acsami.1c15560
State	Published - Dec 22 2021

Bibliographical note

KAUST Repository Item: Exported on 2022-01-27
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The authors acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, URF/1/3771-01-01, GCC Research Council REP/1/3189-01-01, and National Natural Science Foundation of China (61874139). The authors also acknowledge support from Ulrich Buttner in the nanofabrication core lab, KAUST and Laurentiu Braic in the thin film deposition core lab, and KAUST for device fabrication and PLD maintenance. The authors acknowledge Prof. Thomas Anthopoulos at KAUST for his valuable advice and comments.

ASJC Scopus subject areas

General Materials Science

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10.1021/acsami.1c15560

https://repository.kaust.edu.sa/bitstream/10754/666241/1/Preprintfile1.pdf

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@article{03348251138f433bbb824f04b5910c11,

title = "Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors",

abstract = "The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements. We demonstrate the epitaxial growth of β-Ga2O3(-201) thin films on flexible CeO2(001)-buffered Hastelloy tape. The results indicate that CeO2(001) has a small bi-axial lattice mismatch with β-Ga2O3(-201), inducing simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated on the epitaxial β-Ga2O3-coated tape. Measurements reveal that the photodetectors have a responsivity of 4 × 104 mA/W, with an on/off ratio reaching 1000 under 254 nm incident light and 5 V bias voltage. Such a photoelectrical performance is within the mainstream level of β-Ga2O3-based photodetectors using conventional rigid single-crystal substrates. More importantly, it remained robust against more than 20,000 bending test cycles. Moreover, the technique paves the way for the direct in situ epitaxial growth of other flexible oxide semiconductor devices in the future.",

author = "Xiao Tang and Kuang-Hui Li and Yue Zhao and Yanxin Sui and Huili Liang and Zeng Liu and Che-Hao Liao and Wedyan Babatain and Rongyu Lin and Chuanju Wang and Yi Lu and Alqatari, {Feras S.} and Zengxia Mei and Weihua Tang and Xiaohang Li",

note = "KAUST Repository Item: Exported on 2022-01-27 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: The authors acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, URF/1/3771-01-01, GCC Research Council REP/1/3189-01-01, and National Natural Science Foundation of China (61874139). The authors also acknowledge support from Ulrich Buttner in the nanofabrication core lab, KAUST and Laurentiu Braic in the thin film deposition core lab, and KAUST for device fabrication and PLD maintenance. The authors acknowledge Prof. Thomas Anthopoulos at KAUST for his valuable advice and comments.",

year = "2021",

month = dec,

day = "22",

doi = "10.1021/acsami.1c15560",

language = "English (US)",

journal = "ACS Applied Materials & Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

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T1 - Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors

AU - Tang, Xiao

AU - Li, Kuang-Hui

AU - Zhao, Yue

AU - Sui, Yanxin

AU - Liang, Huili

AU - Liu, Zeng

AU - Liao, Che-Hao

AU - Babatain, Wedyan

AU - Lin, Rongyu

AU - Wang, Chuanju

AU - Lu, Yi

AU - Alqatari, Feras S.

AU - Mei, Zengxia

AU - Tang, Weihua

AU - Li, Xiaohang

N1 - KAUST Repository Item: Exported on 2022-01-27 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: The authors acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, URF/1/3771-01-01, GCC Research Council REP/1/3189-01-01, and National Natural Science Foundation of China (61874139). The authors also acknowledge support from Ulrich Buttner in the nanofabrication core lab, KAUST and Laurentiu Braic in the thin film deposition core lab, and KAUST for device fabrication and PLD maintenance. The authors acknowledge Prof. Thomas Anthopoulos at KAUST for his valuable advice and comments.

PY - 2021/12/22

Y1 - 2021/12/22

N2 - The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements. We demonstrate the epitaxial growth of β-Ga2O3(-201) thin films on flexible CeO2(001)-buffered Hastelloy tape. The results indicate that CeO2(001) has a small bi-axial lattice mismatch with β-Ga2O3(-201), inducing simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated on the epitaxial β-Ga2O3-coated tape. Measurements reveal that the photodetectors have a responsivity of 4 × 104 mA/W, with an on/off ratio reaching 1000 under 254 nm incident light and 5 V bias voltage. Such a photoelectrical performance is within the mainstream level of β-Ga2O3-based photodetectors using conventional rigid single-crystal substrates. More importantly, it remained robust against more than 20,000 bending test cycles. Moreover, the technique paves the way for the direct in situ epitaxial growth of other flexible oxide semiconductor devices in the future.

AB - The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations of high-temperature crystallization conditions and lattice-matching requirements. We demonstrate the epitaxial growth of β-Ga2O3(-201) thin films on flexible CeO2(001)-buffered Hastelloy tape. The results indicate that CeO2(001) has a small bi-axial lattice mismatch with β-Ga2O3(-201), inducing simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated on the epitaxial β-Ga2O3-coated tape. Measurements reveal that the photodetectors have a responsivity of 4 × 104 mA/W, with an on/off ratio reaching 1000 under 254 nm incident light and 5 V bias voltage. Such a photoelectrical performance is within the mainstream level of β-Ga2O3-based photodetectors using conventional rigid single-crystal substrates. More importantly, it remained robust against more than 20,000 bending test cycles. Moreover, the technique paves the way for the direct in situ epitaxial growth of other flexible oxide semiconductor devices in the future.

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UR - https://pubs.acs.org/doi/10.1021/acsami.1c15560

UR - http://www.scopus.com/inward/record.url?scp=85122582812&partnerID=8YFLogxK

U2 - 10.1021/acsami.1c15560

DO - 10.1021/acsami.1c15560

M3 - Article

C2 - 34936328

SN - 1944-8244

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

ER -

Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors

Abstract

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ASJC Scopus subject areas

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