Quantum well wires using As implantation induced intermixing in GaAs/AlGaAs

The Fabrication of GaAs/AlGaAs quantum well wires using implantation of As at 45 keV to induce quantum well intermixing is reported. Photoluminescence spectra from the non-intermixed regions, lateral well, and the intermixed regions, barriers, were observed from samples with wires as narrow as 50 nm. The energies of the lateral wells were found to remain constant for wire widths between 1000 nm and 150 nm, and start to shift significantly towards high energy for 80 nm wires, showing 1-D confinement effects. The signal from the lateral well eventually merges with that from the lateral barrier for 35 nm wires, hence an intermixing radius of about 17 nm was estimated for the process.