Abstract
We report the development of a new quantum well intermixing technique in GaAs/AlGaAs laser structure. This technique uses a grown-in AlAs sacrificing layer as intermixing source and with the same layer, but oxidized using a one-step rapid thermal process (RTP), as the intermixing mask. Selective intermixing can therefore be achieved across the wafer using a one-step RTP cycle. Differential bandgap shift of as large as 47 meV has been observed from the masked and oxidized regions.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 184-190 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3896 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore Duration: Nov 30 1999 → Dec 3 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering