Quantum well intermixing enhancement using Ge-doped sol-gel derived Si O2 encapsulant layer in InGaAsInP laser structure

H. S. Djie*, C. K.F. Ho, T. Mei, B. S. Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Fingerprint

Dive into the research topics of 'Quantum well intermixing enhancement using Ge-doped sol-gel derived Si O2 encapsulant layer in InGaAsInP laser structure'. Together they form a unique fingerprint.

Engineering

Earth and Planetary Sciences

Material Science

Keyphrases