Quantum well intermixing enhancement using Ge-doped sol-gel derived Si O2 encapsulant layer in InGaAsInP laser structure

H. S. Djie; C. K.F. Ho; T. Mei; B. S. Ooi

doi:10.1063/1.1868867

Quantum well intermixing enhancement using Ge-doped sol-gel derived Si O2 encapsulant layer in InGaAsInP laser structure

H. S. Djie^*, C. K.F. Ho, T. Mei, B. S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The intermixing enhancement in InGaAsInGaAsP quantum well laser structure has been investigated using the Ge-doped sol-gel derived Si O2 encapsulant layer. A band-gap shift of ~64 nm has been observed from 16% Ge-doped Si O2 capped sample at the annealing temperature of 630 °C with effective intermixing suppression using the e-beam-evaporated Si O2 layer. Ge incorporation in the sol-gel cap reduces the mismatch of thermal expansion coefficients efficiently retaining preferential vacancies, and therefore enhancing the interdiffusion rate. The intermixed material retains a good surface morphology and preserves the optical quality as evidenced by the absence of any appreciable photoluminescence linewidth broadening.

Original language	English (US)
Article number	081106
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	8
DOIs	https://doi.org/10.1063/1.1868867
State	Published - Feb 21 2005
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to acknowledge financial support of Dr Q. N. Ngo’s Optical Networking Focused Interest Group (ONFIG) funded program provided by the Agency for Science, Technology and Research () for the sol-gel work.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1868867

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title = "Quantum well intermixing enhancement using Ge-doped sol-gel derived Si O2 encapsulant layer in InGaAsInP laser structure",

abstract = "The intermixing enhancement in InGaAsInGaAsP quantum well laser structure has been investigated using the Ge-doped sol-gel derived Si O2 encapsulant layer. A band-gap shift of ~64 nm has been observed from 16% Ge-doped Si O2 capped sample at the annealing temperature of 630 °C with effective intermixing suppression using the e-beam-evaporated Si O2 layer. Ge incorporation in the sol-gel cap reduces the mismatch of thermal expansion coefficients efficiently retaining preferential vacancies, and therefore enhancing the interdiffusion rate. The intermixed material retains a good surface morphology and preserves the optical quality as evidenced by the absence of any appreciable photoluminescence linewidth broadening.",

author = "Djie, {H. S.} and Ho, {C. K.F.} and T. Mei and Ooi, {B. S.}",

note = "Funding Information: The authors would like to acknowledge financial support of Dr Q. N. Ngo{\textquoteright}s Optical Networking Focused Interest Group (ONFIG) funded program provided by the Agency for Science, Technology and Research () for the sol-gel work.",

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AU - Djie, H. S.

AU - Ho, C. K.F.

AU - Mei, T.

AU - Ooi, B. S.

N1 - Funding Information: The authors would like to acknowledge financial support of Dr Q. N. Ngo’s Optical Networking Focused Interest Group (ONFIG) funded program provided by the Agency for Science, Technology and Research () for the sol-gel work.

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N2 - The intermixing enhancement in InGaAsInGaAsP quantum well laser structure has been investigated using the Ge-doped sol-gel derived Si O2 encapsulant layer. A band-gap shift of ~64 nm has been observed from 16% Ge-doped Si O2 capped sample at the annealing temperature of 630 °C with effective intermixing suppression using the e-beam-evaporated Si O2 layer. Ge incorporation in the sol-gel cap reduces the mismatch of thermal expansion coefficients efficiently retaining preferential vacancies, and therefore enhancing the interdiffusion rate. The intermixed material retains a good surface morphology and preserves the optical quality as evidenced by the absence of any appreciable photoluminescence linewidth broadening.

AB - The intermixing enhancement in InGaAsInGaAsP quantum well laser structure has been investigated using the Ge-doped sol-gel derived Si O2 encapsulant layer. A band-gap shift of ~64 nm has been observed from 16% Ge-doped Si O2 capped sample at the annealing temperature of 630 °C with effective intermixing suppression using the e-beam-evaporated Si O2 layer. Ge incorporation in the sol-gel cap reduces the mismatch of thermal expansion coefficients efficiently retaining preferential vacancies, and therefore enhancing the interdiffusion rate. The intermixed material retains a good surface morphology and preserves the optical quality as evidenced by the absence of any appreciable photoluminescence linewidth broadening.

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Quantum well intermixing enhancement using Ge-doped sol-gel derived Si O2 encapsulant layer in InGaAsInP laser structure

Abstract

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