The intermixing enhancement in InGaAsInGaAsP quantum well laser structure has been investigated using the Ge-doped sol-gel derived Si O2 encapsulant layer. A band-gap shift of ~64 nm has been observed from 16% Ge-doped Si O2 capped sample at the annealing temperature of 630 °C with effective intermixing suppression using the e-beam-evaporated Si O2 layer. Ge incorporation in the sol-gel cap reduces the mismatch of thermal expansion coefficients efficiently retaining preferential vacancies, and therefore enhancing the interdiffusion rate. The intermixed material retains a good surface morphology and preserves the optical quality as evidenced by the absence of any appreciable photoluminescence linewidth broadening.
Bibliographical noteFunding Information:
The authors would like to acknowledge financial support of Dr Q. N. Ngo’s Optical Networking Focused Interest Group (ONFIG) funded program provided by the Agency for Science, Technology and Research () for the sol-gel work.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)