Quantum oscillations on the surface of InAs epilayer

Yahua Yuan, Xuhui Wang, Jürgen Kosel, Jian Sun

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Indium arsenide (InAs), a narrow-gap semiconductor, has a highly conductive 2-dimensional surface state naturally formed as a result of band bending at the free surface. The Shubnikov–de Haas oscillations have been studied widely in its heterostructures, e.g. 2-dimensional electron gases. However, studies on such a nature surface state are missing. Here, we report a Shubnikov-de Haas (SdH) oscillation that originates from the InAs surface state. Two leading oscillation frequencies in the SdH signal are attributed to Rashba spin-orbit coupling residing in the surface state. We also found for the surface state an effective electron mass of 0.038 m0, heavier than ~0.023 m0 in the bulk. Our study also suggests a Rashba coupling constant in the order of ~10−11 eV m, showing good agreement with previously reported values for InAs.
Original languageEnglish (US)
Pages (from-to)113604
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume114
DOIs
StatePublished - Jun 20 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by National Natural Science Foundation of China (Grant No. 11804397).

Fingerprint

Dive into the research topics of 'Quantum oscillations on the surface of InAs epilayer'. Together they form a unique fingerprint.

Cite this