Quantum Dot Photonic Integrated Circuits on Silicon

John E. Bowers, Art Gossard, Daehwan Jung, Justin Norman, Yating Wan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.
Original languageEnglish (US)
Title of host publication2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781943580422
StatePublished - Aug 6 2018
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18


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