Abstract
Heteroepitaxially grown InAs quantum dot lasers were demonstrated on (001) Si under continuous-wave optical pumping with low thresholds (down to 35 μW). The feasibility of integrating active and passive devices through electrical injection was analyzed.
Original language | English (US) |
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Title of host publication | 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781943580231 |
State | Published - May 31 2017 |
Externally published | Yes |