Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In
 2
 O
 3
 Transistors

Ivan Isakov; Hendrik Faber; Alexander D. Mottram; Satyajit Das; Max Grell; Anna Regoutz; Rebecca Kilmurray; Martyn A. McLachlan; David J. Payne; Thomas D. Anthopoulos

doi:10.1002/aelm.202000682

Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors

Ivan Isakov, Hendrik Faber, Alexander D. Mottram, Satyajit Das, Max Grell, Anna Regoutz, Rebecca Kilmurray, Martyn A. McLachlan, David J. Payne, Thomas D. Anthopoulos

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21 Scopus citations

Abstract

The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness

Original language	English (US)
Pages (from-to)	2000682
Journal	Advanced Electronic Materials
DOIs	https://doi.org/10.1002/aelm.202000682
State	Published - Oct 5 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-07
Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079
Acknowledgements: The authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.

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10.1002/aelm.202000682

https://repository.kaust.edu.sa/bitstream/10754/665454/1/quantum.pdf

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@article{539d48702ccf439c947d9bdf402d276b,

title = "Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors",

abstract = "The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness",

author = "Ivan Isakov and Hendrik Faber and Mottram, {Alexander D.} and Satyajit Das and Max Grell and Anna Regoutz and Rebecca Kilmurray and McLachlan, {Martyn A.} and Payne, {David J.} and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2020-10-07 Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079 Acknowledgements: The authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.",

year = "2020",

month = oct,

day = "5",

doi = "10.1002/aelm.202000682",

language = "English (US)",

pages = "2000682",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

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TY - JOUR

T1 - Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors

AU - Isakov, Ivan

AU - Faber, Hendrik

AU - Mottram, Alexander D.

AU - Das, Satyajit

AU - Grell, Max

AU - Regoutz, Anna

AU - Kilmurray, Rebecca

AU - McLachlan, Martyn A.

AU - Payne, David J.

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2020-10-07 Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079 Acknowledgements: The authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.

PY - 2020/10/5

Y1 - 2020/10/5

N2 - The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness

AB - The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness

UR - http://hdl.handle.net/10754/665454

UR - https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000682

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DO - 10.1002/aelm.202000682

M3 - Article

SN - 2199-160X

SP - 2000682

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

ER -

Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors

Abstract

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