The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness
|Original language||English (US)|
|Journal||Advanced Electronic Materials|
|State||Published - Oct 5 2020|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-07
Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079
Acknowledgements: The authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.