Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors

Ivan Isakov, Hendrik Faber, Alexander D. Mottram, Satyajit Das, Max Grell, Anna Regoutz, Rebecca Kilmurray, Martyn A. McLachlan, David J. Payne, Thomas D. Anthopoulos

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The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness
Original languageEnglish (US)
Pages (from-to)2000682
JournalAdvanced Electronic Materials
StatePublished - Oct 5 2020

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