TY - GEN
T1 - Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction
AU - Wang, Qingxiao
AU - Zhu, Jinmin
AU - Du, Anyan
AU - Liu, Jinping
AU - Hua, YouNan
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2010/7
Y1 - 2010/7
N2 - Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.
AB - Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.
UR - http://hdl.handle.net/10754/564288
UR - http://ieeexplore.ieee.org/document/5531984/
UR - http://www.scopus.com/inward/record.url?scp=77956449975&partnerID=8YFLogxK
U2 - 10.1109/IPFA.2010.5531984
DO - 10.1109/IPFA.2010.5531984
M3 - Conference contribution
SN - 9781424455973
BT - 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -