Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction

Qingxiao Wang, Jinmin Zhu, Anyan Du, Jinping Liu, YouNan Hua

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.
Original languageEnglish (US)
Title of host publication2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781424455973
StatePublished - Jul 2010

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01


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