A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.
|Original language||English (US)|
|Title of host publication||2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Aug 6 2018|