Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si

Yating Wan, Daehwan Jung, Justin Norman, Kaiyin Feng, Alp Dagli, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A quadruple reduction of threshold current density was achieved for electrically pumped quantum-dot micro-rings epitaxially grown on (001) silicon. This was enabled by a low threading dislocation density GaAs buffer layer and a smoothed etching sidewall.
Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580422
DOIs
StatePublished - Jan 1 2018
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

Fingerprint

Dive into the research topics of 'Quadruple reduction of threshold current density for microring quantum dot lasers epitaxially grown on (001) Si'. Together they form a unique fingerprint.

Cite this