Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications

Hongping Zhao; M. Jamil; Guangyu Liu; G. S. Huang; Hua Tong; Guibao Xu; Yujie Ding; Nelson Tansu

doi:10.1364/cleo.2009.ctuf5

Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications

Hongping Zhao^*, M. Jamil, Guangyu Liu, G. S. Huang, Hua Tong, Guibao Xu, Yujie Ding, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Narrow bandgap (0.77eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.

Original language	English (US)
Title of host publication	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Publisher	IEEE Computer Society
ISBN (Print)	9781557528698
DOIs	https://doi.org/10.1364/cleo.2009.ctuf5
State	Published - 2009
Externally published	Yes
Event	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: Jun 2 2009 → Jun 4 2009

Publication series

Name	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Other

Other	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country/Territory	United States
City	Baltimore, MD
Period	06/2/09 → 06/4/09

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1364/cleo.2009.ctuf5

Cite this

Zhao, H., Jamil, M., Liu, G., Huang, G. S., Tong, H., Xu, G., Ding, Y., & Tansu, N. (2009). Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 Article 5226003 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009). IEEE Computer Society. https://doi.org/10.1364/cleo.2009.ctuf5

Zhao, Hongping ; Jamil, M. ; Liu, Guangyu et al. / Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications. 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. IEEE Computer Society, 2009. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

@inproceedings{94a882097648419ab70b0e993e6a7b2b,

title = "Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications",

abstract = "Narrow bandgap (0.77eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.",

author = "Hongping Zhao and M. Jamil and Guangyu Liu and Huang, {G. S.} and Hua Tong and Guibao Xu and Yujie Ding and Nelson Tansu",

year = "2009",

doi = "10.1364/cleo.2009.ctuf5",

language = "English (US)",

isbn = "9781557528698",

series = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

publisher = "IEEE Computer Society",

booktitle = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

address = "United States",

note = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 ; Conference date: 02-06-2009 Through 04-06-2009",

}

Zhao, H, Jamil, M, Liu, G, Huang, GS, Tong, H, Xu, G, Ding, Y & Tansu, N 2009, Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications. in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009., 5226003, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, IEEE Computer Society, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States, 06/2/09. https://doi.org/10.1364/cleo.2009.ctuf5

Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications. / Zhao, Hongping; Jamil, M.; Liu, Guangyu et al.
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. IEEE Computer Society, 2009. 5226003 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications

AU - Zhao, Hongping

AU - Jamil, M.

AU - Liu, Guangyu

AU - Huang, G. S.

AU - Tong, Hua

AU - Xu, Guibao

AU - Ding, Yujie

AU - Tansu, Nelson

PY - 2009

Y1 - 2009

N2 - Narrow bandgap (0.77eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.

AB - Narrow bandgap (0.77eV) In- and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.

UR - http://www.scopus.com/inward/record.url?scp=71049188522&partnerID=8YFLogxK

U2 - 10.1364/cleo.2009.ctuf5

DO - 10.1364/cleo.2009.ctuf5

M3 - Conference contribution

AN - SCOPUS:71049188522

SN - 9781557528698

T3 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

BT - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

PB - IEEE Computer Society

T2 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Y2 - 2 June 2009 through 4 June 2009

ER -

Zhao H, Jamil M, Liu G, Huang GS, Tong H, Xu G et al. Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. IEEE Computer Society. 2009. 5226003. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009). doi: 10.1364/cleo.2009.ctuf5

Pulsed metalorganic chemical vapor deposition of In-polar and N-polar InN semiconductors on GaN / sapphire for terahertz applications

Abstract

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