Pulsed Metalorganic chemical vapor deposition of in-polar and N-Polar InN semiconductors on GaN/Sapphire for terahertz applications

Hongping Zhao; M. Jamil; Guangyu Liu; G. S. Huang; Hua Tong; Guibao Xu; Yujie Ding; Nelson Tansu

Pulsed Metalorganic chemical vapor deposition of in-polar and N-Polar InN semiconductors on GaN/Sapphire for terahertz applications

Hongping Zhao^*, M. Jamil, Guangyu Liu, G. S. Huang, Hua Tong, Guibao Xu, Yujie Ding, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Narrow bandgap (0.77eV) In-and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2009
State	Published - 2009
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States Duration: May 31 2009 → Jun 5 2009

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2009
Country/Territory	United States
City	Baltimore, MD
Period	05/31/09 → 06/5/09

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{362f6551c1b242138d196e68ffc05d74,

title = "Pulsed Metalorganic chemical vapor deposition of in-polar and N-Polar InN semiconductors on GaN/Sapphire for terahertz applications",

abstract = "Narrow bandgap (0.77eV) In-and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.",

author = "Hongping Zhao and M. Jamil and Guangyu Liu and Huang, {G. S.} and Hua Tong and Guibao Xu and Yujie Ding and Nelson Tansu",

year = "2009",

language = "English (US)",

isbn = "9781557528698",

series = "Optics InfoBase Conference Papers",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",

note = "Conference on Lasers and Electro-Optics, CLEO 2009 ; Conference date: 31-05-2009 Through 05-06-2009",

}

Zhao, H, Jamil, M, Liu, G, Huang, GS, Tong, H, Xu, G, Ding, Y & Tansu, N 2009, Pulsed Metalorganic chemical vapor deposition of in-polar and N-Polar InN semiconductors on GaN/Sapphire for terahertz applications. in Conference on Lasers and Electro-Optics, CLEO 2009. Optics InfoBase Conference Papers, Conference on Lasers and Electro-Optics, CLEO 2009, Baltimore, MD, United States, 05/31/09.

Pulsed Metalorganic chemical vapor deposition of in-polar and N-Polar InN semiconductors on GaN/Sapphire for terahertz applications. / Zhao, Hongping; Jamil, M.; Liu, Guangyu et al.
Conference on Lasers and Electro-Optics, CLEO 2009. 2009. (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Pulsed Metalorganic chemical vapor deposition of in-polar and N-Polar InN semiconductors on GaN/Sapphire for terahertz applications

AU - Zhao, Hongping

AU - Jamil, M.

AU - Liu, Guangyu

AU - Huang, G. S.

AU - Tong, Hua

AU - Xu, Guibao

AU - Ding, Yujie

AU - Tansu, Nelson

PY - 2009

Y1 - 2009

N2 - Narrow bandgap (0.77eV) In-and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.

AB - Narrow bandgap (0.77eV) In-and N-polar InN semiconductors were grown by using pulsed metalorganic chemical vapor deposition. Ultrafast laser excitation on optimized In-polar InN sample resulted in terahertz radiation (0.25-2.0THz) with output power of 2.36μW.

UR - http://www.scopus.com/inward/record.url?scp=84894091948&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894091948

SN - 9781557528698

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2009

T2 - Conference on Lasers and Electro-Optics, CLEO 2009

Y2 - 31 May 2009 through 5 June 2009

ER -

Pulsed Metalorganic chemical vapor deposition of in-polar and N-Polar InN semiconductors on GaN/Sapphire for terahertz applications

Abstract

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Other

ASJC Scopus subject areas

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