Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

William J. Baumgardner; Joshua J. Choi; Kaifu Bian; Lena Fitting Kourkoutis; Detlef-M. Smilgies; Michael O. Thompson; Tobias Hanrath

doi:10.1021/nn201588p

Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

William J. Baumgardner, Joshua J. Choi, Kaifu Bian, Lena Fitting Kourkoutis, Detlef-M. Smilgies, Michael O. Thompson, Tobias Hanrath

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.

Original language	English (US)
Pages (from-to)	7010-7019
Number of pages	10
Journal	ACS Nano
Volume	5
Issue number	9
DOIs	https://doi.org/10.1021/nn201588p
State	Published - Aug 8 2011
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-C1-018-02
Acknowledgements: We thank Jan Koenig for providing bulk PbSe thin film samples. W.B. was supported by Award No. KUS-C1-018-02, made by King Abdullah University of Science and Technology (KAUST). K.B. was supported by NSF-CBET 0828703. J.J.C. was supported by the NSF IGERT Fellowship Program on "Nanoscale Control of Surfaces and Interfaces," administered by Cornell's MRSEC. We also acknowledge the Cornell Center for Materials Science (NSF DMR-0520404) and the Cornell High Energy Synchrotron Source (NSF DMR-09262384).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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@article{4671f52762204d96ad0dc8e9de6821ec,

title = "Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals",

abstract = "We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. {\textcopyright} 2011 American Chemical Society.",

author = "Baumgardner, {William J.} and Choi, {Joshua J.} and Kaifu Bian and {Fitting Kourkoutis}, Lena and Detlef-M. Smilgies and Thompson, {Michael O.} and Tobias Hanrath",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-C1-018-02 Acknowledgements: We thank Jan Koenig for providing bulk PbSe thin film samples. W.B. was supported by Award No. KUS-C1-018-02, made by King Abdullah University of Science and Technology (KAUST). K.B. was supported by NSF-CBET 0828703. J.J.C. was supported by the NSF IGERT Fellowship Program on {"}Nanoscale Control of Surfaces and Interfaces,{"} administered by Cornell's MRSEC. We also acknowledge the Cornell Center for Materials Science (NSF DMR-0520404) and the Cornell High Energy Synchrotron Source (NSF DMR-09262384). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.1021/nn201588p",

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AU - Bian, Kaifu

AU - Fitting Kourkoutis, Lena

AU - Smilgies, Detlef-M.

AU - Thompson, Michael O.

AU - Hanrath, Tobias

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-C1-018-02 Acknowledgements: We thank Jan Koenig for providing bulk PbSe thin film samples. W.B. was supported by Award No. KUS-C1-018-02, made by King Abdullah University of Science and Technology (KAUST). K.B. was supported by NSF-CBET 0828703. J.J.C. was supported by the NSF IGERT Fellowship Program on "Nanoscale Control of Surfaces and Interfaces," administered by Cornell's MRSEC. We also acknowledge the Cornell Center for Materials Science (NSF DMR-0520404) and the Cornell High Energy Synchrotron Source (NSF DMR-09262384). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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N2 - We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.

AB - We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.

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JF - ACS Nano

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ER -

Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

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