Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires

L. Gagliano; Abderrezak Belabbes; M. Albani; S. Assali; M. A. Verheijen; L. Miglio; F. Bechstedt; J. E. M. Haverkort; E. P. A. M. Bakkers

doi:10.1021/acs.nanolett.6b04242

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires

L. Gagliano, Abderrezak Belabbes, M. Albani, S. Assali, M. A. Verheijen, L. Miglio, F. Bechstedt, J. E. M. Haverkort, E. P. A. M. Bakkers

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.

Original language	English (US)
Pages (from-to)	7930-7936
Number of pages	7
Journal	Nano Letters
Volume	16
Issue number	12
DOIs	https://doi.org/10.1021/acs.nanolett.6b04242
State	Published - Dec 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank S. E. T. ter Huurne and Y. L. W. van Hees for assisting with the measurements and Dr. S. Koelling for the fabrication of the lamellae. This research is jointly supported by the Dutch Technology Foundation STW and Philips Electronics. STW is part of The Netherlands Organization for Scientific Research (NWO), which is partly founded by the Ministry of Economic Affairs. Solliance is acknowledged for funding the TEM facility.

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title = "Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires",

abstract = "Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.",

author = "L. Gagliano and Abderrezak Belabbes and M. Albani and S. Assali and Verheijen, {M. A.} and L. Miglio and F. Bechstedt and Haverkort, {J. E. M.} and Bakkers, {E. P. A. M.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank S. E. T. ter Huurne and Y. L. W. van Hees for assisting with the measurements and Dr. S. Koelling for the fabrication of the lamellae. This research is jointly supported by the Dutch Technology Foundation STW and Philips Electronics. STW is part of The Netherlands Organization for Scientific Research (NWO), which is partly founded by the Ministry of Economic Affairs. Solliance is acknowledged for funding the TEM facility.",

year = "2016",

month = dec,

doi = "10.1021/acs.nanolett.6b04242",

language = "English (US)",

volume = "16",

pages = "7930--7936",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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T1 - Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires

AU - Gagliano, L.

AU - Belabbes, Abderrezak

AU - Albani, M.

AU - Assali, S.

AU - Verheijen, M. A.

AU - Miglio, L.

AU - Bechstedt, F.

AU - Haverkort, J. E. M.

AU - Bakkers, E. P. A. M.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank S. E. T. ter Huurne and Y. L. W. van Hees for assisting with the measurements and Dr. S. Koelling for the fabrication of the lamellae. This research is jointly supported by the Dutch Technology Foundation STW and Philips Electronics. STW is part of The Netherlands Organization for Scientific Research (NWO), which is partly founded by the Ministry of Economic Affairs. Solliance is acknowledged for funding the TEM facility.

PY - 2016/12

Y1 - 2016/12

N2 - Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.

AB - Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ-δ) to direct (δ-δ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.

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JO - Nano Letters

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ER -

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires

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