Prospective technology for system-on-a-chip: N2 implant followed by VHP O2 re-oxidation

T. Y. Luo, H. N. Al-Shareef, Graham Brown, V. H.C. Watt, A. Karamcheti, Marc Jackson, H. R. Huff, B. Evans, C. H. Lee, H. F. Luan, D. L. Kwong

Research output: Contribution to journalArticlepeer-review


A novel technique - N2 ion implant (N2 I/I) followed by vertical high pressure (VHP) O2 re-oxidation in a furnace, capable of growing oxides of multiple thickness is presented. It is observed that the oxidation rate can be well modulated by varying the N2 I/I dose, and VHP O2 re-oxidation provides enhanced oxide growth rate and controls the nitrogen profile in the film, as compared to RTO or furnace O2 re-oxidation. Therefore, more than 500% differential oxide growth rate can be realized by using N2 I/I (1×1014-3×1015 cm-2) and VHP O2 re-oxidation (15-25 atm, 750-875 °C). In addition, post-implant RTA N2 anneal is found to improve the channel carrier mobility (μeff), and alter the flat-band (VFB) and threshold voltages (VT) without increasing the oxide thickness.

Original languageEnglish (US)
Pages (from-to)271-280
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Issue number1
StatePublished - Aug 18 2000
Externally publishedYes


  • N2 ion implant (N2 I/I)
  • System-on-a-Chip (SOC)
  • Vertical high pressure (VHP) re-oxidation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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