Abstract
A novel technique - N2 ion implant (N2 I/I) followed by vertical high pressure (VHP) O2 re-oxidation in a furnace, capable of growing oxides of multiple thickness is presented. It is observed that the oxidation rate can be well modulated by varying the N2 I/I dose, and VHP O2 re-oxidation provides enhanced oxide growth rate and controls the nitrogen profile in the film, as compared to RTO or furnace O2 re-oxidation. Therefore, more than 500% differential oxide growth rate can be realized by using N2 I/I (1×1014-3×1015 cm-2) and VHP O2 re-oxidation (15-25 atm, 750-875 °C). In addition, post-implant RTA N2 anneal is found to improve the channel carrier mobility (μeff), and alter the flat-band (VFB) and threshold voltages (VT) without increasing the oxide thickness.
Original language | English (US) |
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Pages (from-to) | 271-280 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4181 |
Issue number | 1 |
DOIs | |
State | Published - Aug 18 2000 |
Externally published | Yes |
Keywords
- N2 ion implant (N2 I/I)
- System-on-a-Chip (SOC)
- Vertical high pressure (VHP) re-oxidation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering