Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure

Tribhuwan Pandey; Avinash P. Nayak; Jin Liu; Samuel T. Moran; Joon-Seok Kim; Lain-Jong Li; Jung-Fu Lin; Deji Akinwande; Abhishek K. Singh

doi:10.1002/smll.201600808

Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure

Tribhuwan Pandey, Avinash P. Nayak, Jin Liu, Samuel T. Moran, Joon-Seok Kim, Lain-Jong Li, Jung-Fu Lin, Deji Akinwande, Abhishek K. Singh

Research output: Contribution to journal › Article › peer-review

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Abstract

A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.

Original language	English (US)
Pages (from-to)	4063-4069
Number of pages	7
Journal	Small
Volume	12
Issue number	30
DOIs	https://doi.org/10.1002/smll.201600808
State	Published - Jun 20 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: T.P. and A.P.N. contributed equally to this work. Research at Indian Institute of Science was supported by National Program on Micro and Smart Systems (NpMASS) PARC No. 1:22 and DST Nanomission. Research at The University of Texas at Austin was supported in part by a Young Investigator Award (D.A.) from the Defense Threat Reduction Agency (DTRA). J.-F.L. acknowledges financial supports from Deep Carbon Observatory of the Sloan Foundation. The authors acknowledge computational facilities provided by Supercomputing Education and Research Centre, Indian Institute of Science, Bangalore.

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title = "Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure",

abstract = "A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.",

author = "Tribhuwan Pandey and Nayak, {Avinash P.} and Jin Liu and Moran, {Samuel T.} and Joon-Seok Kim and Lain-Jong Li and Jung-Fu Lin and Deji Akinwande and Singh, {Abhishek K.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: T.P. and A.P.N. contributed equally to this work. Research at Indian Institute of Science was supported by National Program on Micro and Smart Systems (NpMASS) PARC No. 1:22 and DST Nanomission. Research at The University of Texas at Austin was supported in part by a Young Investigator Award (D.A.) from the Defense Threat Reduction Agency (DTRA). J.-F.L. acknowledges financial supports from Deep Carbon Observatory of the Sloan Foundation. The authors acknowledge computational facilities provided by Supercomputing Education and Research Centre, Indian Institute of Science, Bangalore.",

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doi = "10.1002/smll.201600808",

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T1 - Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure

AU - Pandey, Tribhuwan

AU - Nayak, Avinash P.

AU - Liu, Jin

AU - Moran, Samuel T.

AU - Kim, Joon-Seok

AU - Li, Lain-Jong

AU - Lin, Jung-Fu

AU - Akinwande, Deji

AU - Singh, Abhishek K.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: T.P. and A.P.N. contributed equally to this work. Research at Indian Institute of Science was supported by National Program on Micro and Smart Systems (NpMASS) PARC No. 1:22 and DST Nanomission. Research at The University of Texas at Austin was supported in part by a Young Investigator Award (D.A.) from the Defense Threat Reduction Agency (DTRA). J.-F.L. acknowledges financial supports from Deep Carbon Observatory of the Sloan Foundation. The authors acknowledge computational facilities provided by Supercomputing Education and Research Centre, Indian Institute of Science, Bangalore.

PY - 2016/6/20

Y1 - 2016/6/20

N2 - A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.

AB - A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.

UR - http://hdl.handle.net/10754/621574

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EP - 4069

JO - Small

JF - Small

IS - 30

ER -

Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2Heterostructure

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