Preparation of SiO2 on InP substrate by sol-gel technique for integrated optics

J. Liu; Y. L. Lam; Y. C. Chan; Y. Zhou; B. S. Ooi

Preparation of SiO₂ on InP substrate by sol-gel technique for integrated optics

J. Liu^*, Y. L. Lam, Y. C. Chan, Y. Zhou, B. S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we report our success in depositing sol-gel derived silica films on InP using multiple spin coating and rapid thermal processing. The effect of rapid thermal process temperature and time duration on the property of the film is studied. The dependence of the single layer thickness as well as its refractive index upon the film preparation parameters have been obtained and are compared with that on silicon substrates. As a result of the study, a crack-free SiO₂ film with a thickness of 0.5 μm has been successfully deposited on InP at a processing temperature of 450°C. We believe that our experimental result has indicated that it is possible to fabricate hybridized integrated optics devices on compound semiconductors through the sol-gel route.

Original language	English (US)
Pages (from-to)	80-85
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3631
State	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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title = "Preparation of SiO2 on InP substrate by sol-gel technique for integrated optics",

abstract = "In this paper, we report our success in depositing sol-gel derived silica films on InP using multiple spin coating and rapid thermal processing. The effect of rapid thermal process temperature and time duration on the property of the film is studied. The dependence of the single layer thickness as well as its refractive index upon the film preparation parameters have been obtained and are compared with that on silicon substrates. As a result of the study, a crack-free SiO2 film with a thickness of 0.5 μm has been successfully deposited on InP at a processing temperature of 450°C. We believe that our experimental result has indicated that it is possible to fabricate hybridized integrated optics devices on compound semiconductors through the sol-gel route.",

author = "J. Liu and Lam, {Y. L.} and Chan, {Y. C.} and Y. Zhou and Ooi, {B. S.}",

year = "1999",

language = "English (US)",

volume = "3631",

pages = "80--85",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Preparation of SiO2 on InP substrate by sol-gel technique for integrated optics

AU - Liu, J.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Zhou, Y.

AU - Ooi, B. S.

PY - 1999

Y1 - 1999

N2 - In this paper, we report our success in depositing sol-gel derived silica films on InP using multiple spin coating and rapid thermal processing. The effect of rapid thermal process temperature and time duration on the property of the film is studied. The dependence of the single layer thickness as well as its refractive index upon the film preparation parameters have been obtained and are compared with that on silicon substrates. As a result of the study, a crack-free SiO2 film with a thickness of 0.5 μm has been successfully deposited on InP at a processing temperature of 450°C. We believe that our experimental result has indicated that it is possible to fabricate hybridized integrated optics devices on compound semiconductors through the sol-gel route.

AB - In this paper, we report our success in depositing sol-gel derived silica films on InP using multiple spin coating and rapid thermal processing. The effect of rapid thermal process temperature and time duration on the property of the film is studied. The dependence of the single layer thickness as well as its refractive index upon the film preparation parameters have been obtained and are compared with that on silicon substrates. As a result of the study, a crack-free SiO2 film with a thickness of 0.5 μm has been successfully deposited on InP at a processing temperature of 450°C. We believe that our experimental result has indicated that it is possible to fabricate hybridized integrated optics devices on compound semiconductors through the sol-gel route.

UR - http://www.scopus.com/inward/record.url?scp=0032680828&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032680828

SN - 0277-786X

VL - 3631

SP - 80

EP - 85

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Preparation of SiO₂ on InP substrate by sol-gel technique for integrated optics

Abstract

ASJC Scopus subject areas

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