Power-dependent photoluminescence in strained InxGa1−xN/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects

Nacir Tit, Pawan Mishra, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Combined experimental and theoretical efforts are focused to study hexagonal InGaN/GaN[0001] multiple-quantum wells (MQWs). Plasma-assisted molecular-beam epitaxy (PA-MBE) is used to grow high-quality MQWs with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and photoluminescence (PL) indicated that each period is composed of 10 nm GaN barrier and 2.5 nm InGaN well with x ≤ 0.12. Usually, these MQWs have radiations with the blue region. However, in power (from 0.008 mW to 8 mW) dependent micro-photoluminescence (PL), measured at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. While in literature such shift is speculated to be attributed to so-called
Original languageEnglish (US)
Title of host publication2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages7
ISBN (Print)9781538622513
StatePublished - Apr 18 2018

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