Potential-induced degradation in perovskite/silicon tandem photovoltaic modules

Lujia Xu*, Jiang Liu, Wei Luo, Nimer Wehbe, Akmaral Seitkhan, Maxime Babics, Jingxuan Kang, Michele De Bastiani, Erkan Aydin, Thomas G. Allen, Mohammed Alamer, Wenbo Yan, Fuzong Xu, Atteq Ur Rehman, Stefaan De Wolf*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Despite great progress in perovskite/silicon tandem solar cells’ device performance, their susceptibility to potential-induced degradation (PID) remains unexplored. In this study, we find that applying a voltage bias of −1,000 V to single-device perovskite/silicon tandem modules at 60°C for ∼1 day can cause a ∼50% loss in their power conversion efficiency, which raises concerns for tandem commercialization. We found no accumulation of Na+ in the perovskite or silicon photon absorbers. Consequently, no obvious shunt is observed in our silicon subcells. We also find that elements diffuse from the perovskite into the module encapsulant during PID testing. We argue that this diffusion is the main PID mechanism in our tandem modules. While applying a large positive voltage bias can partially recover this PID, introducing barriers or structures to prevent elemental diffusion out of the perovskite may be required to mitigate this degradation phenomenon.

Original languageEnglish (US)
Article number101026
JournalCell Reports Physical Science
Volume3
Issue number9
DOIs
StatePublished - Sep 21 2022

Bibliographical note

Publisher Copyright:
© 2022 The Author(s)

Keywords

  • degradation
  • perovskite
  • perovskite/silicon tandem
  • perovskite/silicon tandem module
  • photovoltaic
  • PID
  • potential induced degradation
  • PV
  • silicon
  • tandem

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • General Engineering
  • General Energy
  • General Physics and Astronomy

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