Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser

H. S. Djie*, Y. Wang, D. Negro, B. S. Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


The authors demonstrate the selective postgrowth band gap engineering and the fabrication of band gap tuned laser in InAs-InAlGaAs quantum-dash lasers grown on InP substrate. The process utilizes nitrogen implantation to induce local defects and to enhance the group-III intermixing rate spatially upon the thermal annealing. Compared with the as-grown laser, intermixed laser with wavelength shifted by 127 nm shows a 36% reduction in threshold current density and produces a comparable slope of efficiency. The integrity of the intermixed material is retained suggesting that intermixing process paves way to planar, monolithic integration of quantum-dash-based devices.

Original languageEnglish (US)
Article number031101
JournalApplied Physics Letters
Issue number3
StatePublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Postgrowth band gap trimming of InAs/InAlGaAs quantum-dash laser'. Together they form a unique fingerprint.

Cite this