We report on post-fabrication, in situ, laser induced reduction of graphene oxide (GO) field effect transistors. Our one-step method is efficient, fast, and elevates the conductivity of GO transistor channels by two orders of magnitude. Compared to other reduction techniques, it is facile and simple since it does not require any stringent experimental conditions. Most importantly, we show here that it can be applied for, in situ, post-fabrication reduction of GO devices without compromising any of its components. The physical properties of the laser-reduced graphene oxide were assessed by micro-Raman and X-ray photoelectron spectroscopy analysis and the electrical properties by electric field effect measurements. The application of this technique in other graphene-based optoelectronic devices, especially those fabricated on inexpensive and temperature sensitive flexible substrates such as plastic, is envisaged.
Bibliographical noteFunding Information:
This work was partially supported by the Integrated Initiative of European Laser Research Infrastructures LASERLAB-II (Grant Agreement No. 228334). The authors would like to acknowledge Mrs. Maria Kayabaki of IESL-FORTH for her support concerning the IV measurements and Dr. Labrini Sygellou of ICEHT-FORTH for the XPS experiments.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)