Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

Ethem Erkan Aktakka, Niloufar Ghafouri, Casey Smith, Rebecca Lorenz Peterson, Muhammad Mustafa Hussain, Khalil Najafi

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.
Original languageEnglish (US)
Pages (from-to)1334-1336
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number10
DOIs
StatePublished - Oct 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant. The review of this letter was arranged by Editor J. Cai.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate'. Together they form a unique fingerprint.

Cite this