Abstract
This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.
Original language | English (US) |
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Pages (from-to) | 1334-1336 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 34 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2013 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: This work was supported by King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant. The review of this letter was arranged by Editor J. Cai.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering