Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism

Mufei Yu; Hong Xu; Vasiliki Kosma; Jeremy Odent; Kazuki Kasahara; Emmanuel Giannelis; Christopher Ober

doi:10.2494/photopolymer.29.509

Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism

Mufei Yu, Hong Xu, Vasiliki Kosma, Jeremy Odent, Kazuki Kasahara, Emmanuel Giannelis, Christopher Ober

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Methacrylate based nanoparticle materials have been investigated for their negative-tone patterning with DUV (248nm, 254nm), e-beam and EUV lithography, and show promising EUV sensitivity and resolution. In order to further extend the application of this novel class of materials and understand more about the underlying mechanism, we continue to study its dual-tone behavior and the tone-switching process. Catalyzed by a photoradical generator, we have been able to print positive tone line-space patterns with both DUV and e-beam exposure enabled patterning of features with a wide range of line-widths. By monitoring the patterning process, the PEB conditions have been found to be a crucial factor, which determines the solubility and core-ligand interactions.

Original language	English (US)
Pages (from-to)	509-512
Number of pages	4
Journal	Journal of Photopolymer Science and Technology
Volume	29
Issue number	3
DOIs	https://doi.org/10.2494/photopolymer.29.509
State	Published - 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-05-26
Acknowledgements: The authors gratefully acknowledge financial support by JSR, and access to the facilities of the Cornell Nanoscale Science and Technology Facility (CNF) and the KAUST-Cornell Center of Energy and Sustainability (KAUST_CU).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Materials Chemistry
Polymers and Plastics

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10.2494/photopolymer.29.509

Cite this

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title = "Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism",

abstract = "Methacrylate based nanoparticle materials have been investigated for their negative-tone patterning with DUV (248nm, 254nm), e-beam and EUV lithography, and show promising EUV sensitivity and resolution. In order to further extend the application of this novel class of materials and understand more about the underlying mechanism, we continue to study its dual-tone behavior and the tone-switching process. Catalyzed by a photoradical generator, we have been able to print positive tone line-space patterns with both DUV and e-beam exposure enabled patterning of features with a wide range of line-widths. By monitoring the patterning process, the PEB conditions have been found to be a crucial factor, which determines the solubility and core-ligand interactions.",

author = "Mufei Yu and Hong Xu and Vasiliki Kosma and Jeremy Odent and Kazuki Kasahara and Emmanuel Giannelis and Christopher Ober",

note = "KAUST Repository Item: Exported on 2022-05-26 Acknowledgements: The authors gratefully acknowledge financial support by JSR, and access to the facilities of the Cornell Nanoscale Science and Technology Facility (CNF) and the KAUST-Cornell Center of Energy and Sustainability (KAUST_CU). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2016",

doi = "10.2494/photopolymer.29.509",

language = "English (US)",

volume = "29",

pages = "509--512",

journal = "Journal of Photopolymer Science and Technology",

issn = "0914-9244",

publisher = "Tokai University",

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T1 - Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism

AU - Yu, Mufei

AU - Xu, Hong

AU - Kosma, Vasiliki

AU - Odent, Jeremy

AU - Kasahara, Kazuki

AU - Giannelis, Emmanuel

AU - Ober, Christopher

N1 - KAUST Repository Item: Exported on 2022-05-26 Acknowledgements: The authors gratefully acknowledge financial support by JSR, and access to the facilities of the Cornell Nanoscale Science and Technology Facility (CNF) and the KAUST-Cornell Center of Energy and Sustainability (KAUST_CU). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016

Y1 - 2016

N2 - Methacrylate based nanoparticle materials have been investigated for their negative-tone patterning with DUV (248nm, 254nm), e-beam and EUV lithography, and show promising EUV sensitivity and resolution. In order to further extend the application of this novel class of materials and understand more about the underlying mechanism, we continue to study its dual-tone behavior and the tone-switching process. Catalyzed by a photoradical generator, we have been able to print positive tone line-space patterns with both DUV and e-beam exposure enabled patterning of features with a wide range of line-widths. By monitoring the patterning process, the PEB conditions have been found to be a crucial factor, which determines the solubility and core-ligand interactions.

AB - Methacrylate based nanoparticle materials have been investigated for their negative-tone patterning with DUV (248nm, 254nm), e-beam and EUV lithography, and show promising EUV sensitivity and resolution. In order to further extend the application of this novel class of materials and understand more about the underlying mechanism, we continue to study its dual-tone behavior and the tone-switching process. Catalyzed by a photoradical generator, we have been able to print positive tone line-space patterns with both DUV and e-beam exposure enabled patterning of features with a wide range of line-widths. By monitoring the patterning process, the PEB conditions have been found to be a crucial factor, which determines the solubility and core-ligand interactions.

UR - http://hdl.handle.net/10754/678252

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DO - 10.2494/photopolymer.29.509

M3 - Article

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EP - 512

JO - Journal of Photopolymer Science and Technology

JF - Journal of Photopolymer Science and Technology

IS - 3

ER -

Positive Tone Nanoparticle Photoresists: New Insight on the Patterning Mechanism

Abstract

Bibliographical note

ASJC Scopus subject areas

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