Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

G. Z. Xing; J. B. Yi; F. Yan; Tao Wu; S. Li

doi:10.1063/1.4879463

Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

G. Z. Xing, J. B. Yi, F. Yan, Tao Wu, S. Li

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

Original language	English (US)
Pages (from-to)	202411
Journal	Applied Physics Letters
Volume	104
Issue number	20
DOIs	https://doi.org/10.1063/1.4879463
State	Published - May 24 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

Access to Document

10.1063/1.4879463

https://repository.kaust.edu.sa/bitstream/10754/552147/1/1.4879463.pdf

Cite this

@article{7b56cb82d35c4b35896a37b0933846eb,

title = "Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition",

abstract = "We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. {\textcopyright} 2014 AIP Publishing LLC.",

author = "Xing, {G. Z.} and Yi, {J. B.} and F. Yan and Tao Wu and S. Li",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2014",

month = may,

day = "24",

doi = "10.1063/1.4879463",

language = "English (US)",

volume = "104",

pages = "202411",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

AU - Xing, G. Z.

AU - Yi, J. B.

AU - Yan, F.

AU - Wu, Tao

AU - Li, S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/5/24

Y1 - 2014/5/24

N2 - We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

AB - We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

UR - http://hdl.handle.net/10754/552147

UR - http://scitation.aip.org/content/aip/journal/apl/104/20/10.1063/1.4879463

UR - http://www.scopus.com/inward/record.url?scp=84901465051&partnerID=8YFLogxK

U2 - 10.1063/1.4879463

DO - 10.1063/1.4879463

M3 - Article

SN - 0003-6951

VL - 104

SP - 202411

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this