Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric

Flora M. Li, Parul Dhagat, Hanna M. Haverinen, Iain McCulloch, Martin Heeney, Ghassan E. Jabbour, Arokia Nathan

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


It is well known that surface modification of the gate dielectric in organic thin film transistors (TFTs) plays an important role in device performance, often giving rise to severalfold improvements in field-effect mobility. This paper reports on solution-processed polymer TFTs with mobilities comparable to high performance counterparts despite the absence of dielectric surface pretreatment. An effective mobility of 0.1 cm2 V s was obtained with poly(2,5-bis(3-dodecylthiophene-2-yl)thieno[3,2-b]thiophene) transistors on silicon nitride gate dielectric. The results indicate that by judicious preparation of the device layers, one can mitigate the need for dielectric surface pretreatment, thereby reducing fabrication complexity without compromising TFT performance. © 2008 American Institute of Physics.
Original languageEnglish (US)
JournalApplied Physics Letters
Issue number7
StatePublished - Sep 1 2008
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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