Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

Jesus Alfonso Caraveo-Frescas, Yasser Khan, Husam N. Alshareef

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36 Scopus citations


Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.
Original languageEnglish (US)
JournalScientific Reports
Issue number1
StatePublished - Jun 10 2014

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