Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Mario Lanza; Vanessa Iglesias; Marc Porti; Montse Nafria; Xavier Aymerich

doi:10.1186/1556-276X-6-108

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Mario Lanza, Vanessa Iglesias, Marc Porti, Montse Nafria, Xavier Aymerich

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.

Original language	English (US)
Journal	Nanoscale Research Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-6-108
State	Published - Jan 1 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1186/1556-276X-6-108

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abstract = "In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. {\textcopyright} 2011 Lanza et al.",

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AU - Lanza, Mario

AU - Iglesias, Vanessa

AU - Porti, Marc

AU - Nafria, Montse

AU - Aymerich, Xavier

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N2 - In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.

AB - In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed. © 2011 Lanza et al.

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Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Abstract

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ASJC Scopus subject areas

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