Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes

N. G. Young, R. M. Farrell, S. Oh, M. Cantore, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck

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Abstract

We demonstrate through simulation that complete screening of polarization-induced electric fields in c-plane InGaN/GaN quantum wells (QWs) is possible by equal n- and p-doping of 10 nm layers immediately adjacent to the QW at a level of 7 × 1019 cm-3. Single QW light-emitting diodes with varying QW thickness are grown using the simulated structure. Biased photoluminescence (PL) measurements show no wavelength shift, indicating complete screening of the polarization field. The behavior of PL peak intensity as a function of bias can be explained as a competition between radiative recombination and carrier escape through tunneling or thermionic emission.
Original languageEnglish (US)
Pages (from-to)061105
JournalAPPLIED PHYSICS LETTERS
Volume108
Issue number6
DOIs
StatePublished - Feb 11 2016
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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