We demonstrate through simulation that complete screening of polarization-induced electric fields in c-plane InGaN/GaN quantum wells (QWs) is possible by equal n- and p-doping of 10 nm layers immediately adjacent to the QW at a level of 7 × 1019 cm-3. Single QW light-emitting diodes with varying QW thickness are grown using the simulated structure. Biased photoluminescence (PL) measurements show no wavelength shift, indicating complete screening of the polarization field. The behavior of PL peak intensity as a function of bias can be explained as a competition between radiative recombination and carrier escape through tunneling or thermionic emission.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)